ZANANDREA, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 1.524
AS - Asia 710
EU - Europa 361
AF - Africa 86
SA - Sud America 76
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 8
Totale 2.778
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Nazione #
US - Stati Uniti d'America 1.473
SG - Singapore 269
CN - Cina 143
IT - Italia 78
VN - Vietnam 69
HK - Hong Kong 50
DE - Germania 38
FI - Finlandia 36
BR - Brasile 35
PL - Polonia 32
FR - Francia 28
IN - India 21
GB - Regno Unito 19
JP - Giappone 19
RU - Federazione Russa 16
TW - Taiwan 15
SE - Svezia 14
BD - Bangladesh 13
IQ - Iraq 11
NL - Olanda 11
CA - Canada 10
IE - Irlanda 10
TR - Turchia 10
ID - Indonesia 9
KR - Corea 9
CO - Colombia 8
GE - Georgia 8
ES - Italia 7
UZ - Uzbekistan 7
VE - Venezuela 7
AL - Albania 6
GM - Gambi 6
MX - Messico 6
UA - Ucraina 6
ZA - Sudafrica 6
AT - Austria 5
AU - Australia 5
LA - Repubblica Popolare Democratica del Laos 5
MA - Marocco 5
MR - Mauritania 5
PH - Filippine 5
AM - Armenia 4
AO - Angola 4
AR - Argentina 4
BZ - Belize 4
CL - Cile 4
CR - Costa Rica 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
EC - Ecuador 4
KE - Kenya 4
LU - Lussemburgo 4
MK - Macedonia 4
PE - Perù 4
PT - Portogallo 4
RS - Serbia 4
SA - Arabia Saudita 4
SK - Slovacchia (Repubblica Slovacca) 4
UY - Uruguay 4
XK - ???statistics.table.value.countryCode.XK??? 4
CH - Svizzera 3
CI - Costa d'Avorio 3
CM - Camerun 3
DJ - Gibuti 3
GF - Guiana Francese 3
GN - Guinea 3
IS - Islanda 3
JM - Giamaica 3
JO - Giordania 3
KG - Kirghizistan 3
LV - Lettonia 3
LY - Libia 3
MN - Mongolia 3
MU - Mauritius 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PK - Pakistan 3
SO - Somalia 3
TJ - Tagikistan 3
TZ - Tanzania 3
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BJ - Benin 2
BW - Botswana 2
CV - Capo Verde 2
CW - ???statistics.table.value.countryCode.CW??? 2
CY - Cipro 2
DM - Dominica 2
DZ - Algeria 2
EE - Estonia 2
ET - Etiopia 2
EU - Europa 2
GH - Ghana 2
GP - Guadalupe 2
GR - Grecia 2
HN - Honduras 2
HR - Croazia 2
HT - Haiti 2
HU - Ungheria 2
Totale 2.711
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Città #
Ashburn 199
San Jose 162
Singapore 150
Woodbridge 130
Ann Arbor 124
Houston 123
Fairfield 119
Seattle 78
Wilmington 54
Santa Clara 53
Chandler 48
Cambridge 46
Hong Kong 46
Beijing 43
Bytom 26
Boardman 25
Hanoi 22
Helsinki 21
Des Moines 19
Medford 15
Princeton 15
Lauterbourg 14
Los Angeles 14
Ho Chi Minh City 13
Padova 12
San Diego 12
Tokyo 12
Council Bluffs 11
Dublin 10
Nanjing 10
Buffalo 7
Cagliari 7
Tashkent 7
Delhi 6
Mestre 6
Modena 6
New York 6
Orem 6
Columbus 5
Guangzhou 5
Nouakchott 5
Tbilisi 5
Brooklyn 4
Chennai 4
Da Nang 4
Dallas 4
Haiphong 4
Hefei 4
Luanda 4
Manchester 4
Milan 4
Montevideo 4
Munich 4
Nairobi 4
Shanghai 4
Shenyang 4
São Paulo 4
Taichung 4
Toronto 4
Vientiane 4
Warsaw 4
Yerevan 4
Abidjan 3
Amman 3
Baghdad 3
Bandung 3
Belize City 3
Bengaluru 3
Bishkek 3
Bratislava 3
Cayenne 3
Conakry 3
Daegu 3
Dar es Salaam 3
Dushanbe 3
Falkenstein 3
Frankfurt am Main 3
Hebei 3
Hsinchu 3
Hải Dương 3
Istanbul 3
Lima 3
Mogadishu 3
Montreal 3
North Bergen 3
Parma 3
Riga 3
Rio de Janeiro 3
San José 3
Santo Domingo 3
Skopje 3
Taipei 3
Tirana 3
Tomsk 3
Ulan Bator 3
Vienna 3
Accra 2
Addis Ababa 2
Almaty 2
Ankara 2
Totale 1.887
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Nome #
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 282
Open issues in GaN-based HEMTs: performances, parasitics and reliability 245
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 238
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 235
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 216
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 205
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 193
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 176
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 173
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 156
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 145
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 140
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 137
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 126
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 119
Totale 2.786
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Categoria #
all - tutte 7.924
article - articoli 3.755
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.679
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202123 0 0 0 0 0 0 0 0 0 0 14 9
2021/2022174 7 24 30 13 5 6 7 20 9 2 14 37
2022/2023145 22 4 4 8 34 26 3 10 27 0 6 1
2023/2024101 18 11 4 9 5 5 18 6 2 6 6 11
2024/2025379 2 37 17 21 53 34 16 40 20 11 61 67
2025/20261.192 42 141 156 118 147 48 141 129 108 81 81 0
Totale 2.786