ZANANDREA, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 1.129
AS - Asia 387
EU - Europa 291
AF - Africa 55
SA - Sud America 44
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 7
Totale 1.922
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Nazione #
US - Stati Uniti d'America 1.093
SG - Singapore 144
CN - Cina 94
IT - Italia 60
HK - Hong Kong 48
DE - Germania 36
FI - Finlandia 33
PL - Polonia 29
BR - Brasile 22
RU - Federazione Russa 15
GB - Regno Unito 14
TW - Taiwan 14
SE - Svezia 13
FR - Francia 12
IN - India 12
JP - Giappone 11
IE - Irlanda 10
NL - Olanda 9
KR - Corea 8
UA - Ucraina 6
AL - Albania 5
CA - Canada 5
CO - Colombia 5
ID - Indonesia 5
MX - Messico 5
AT - Austria 4
CR - Costa Rica 4
CZ - Repubblica Ceca 4
GE - Georgia 4
GM - Gambi 4
MR - Mauritania 4
SK - Slovacchia (Repubblica Slovacca) 4
UY - Uruguay 4
ZA - Sudafrica 4
AM - Armenia 3
BZ - Belize 3
CH - Svizzera 3
CM - Camerun 3
DO - Repubblica Dominicana 3
ES - Italia 3
GF - Guiana Francese 3
IQ - Iraq 3
IS - Islanda 3
KE - Kenya 3
MK - Macedonia 3
MN - Mongolia 3
MU - Mauritius 3
NZ - Nuova Zelanda 3
PE - Perù 3
PT - Portogallo 3
RS - Serbia 3
TR - Turchia 3
TZ - Tanzania 3
UZ - Uzbekistan 3
VE - Venezuela 3
XK - ???statistics.table.value.countryCode.XK??? 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
AU - Australia 2
AZ - Azerbaigian 2
BJ - Benin 2
CI - Costa d'Avorio 2
CW - ???statistics.table.value.countryCode.CW??? 2
CY - Cipro 2
DJ - Gibuti 2
DM - Dominica 2
EC - Ecuador 2
EE - Estonia 2
EU - Europa 2
GH - Ghana 2
GN - Guinea 2
GP - Guadalupe 2
GR - Grecia 2
HR - Croazia 2
IR - Iran 2
JM - Giamaica 2
JO - Giordania 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LC - Santa Lucia 2
LU - Lussemburgo 2
LV - Lettonia 2
LY - Libia 2
ML - Mali 2
MZ - Mozambico 2
NP - Nepal 2
PF - Polinesia Francese 2
PH - Filippine 2
PR - Porto Rico 2
RO - Romania 2
RW - Ruanda 2
SA - Arabia Saudita 2
SO - Somalia 2
TJ - Tagikistan 2
TL - Timor Orientale 2
TN - Tunisia 2
UG - Uganda 2
AD - Andorra 1
AR - Argentina 1
Totale 1.896
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Città #
Woodbridge 130
Ann Arbor 124
Houston 122
Fairfield 119
Ashburn 81
Seattle 78
Singapore 76
Wilmington 54
Santa Clara 51
Chandler 48
Cambridge 46
Hong Kong 44
Beijing 37
Bytom 26
Boardman 25
Des Moines 19
Helsinki 18
Medford 15
Princeton 15
Padova 12
San Diego 12
Los Angeles 11
Dublin 10
Nanjing 10
Tokyo 7
Cagliari 6
Mestre 6
Modena 6
Delhi 5
Brooklyn 4
Council Bluffs 4
Guangzhou 4
Hefei 4
Montevideo 4
Munich 4
Nouakchott 4
Shenyang 4
Bandung 3
Bratislava 3
Cayenne 3
Daegu 3
Dar es Salaam 3
Falkenstein 3
Hebei 3
Hsinchu 3
Nairobi 3
Parma 3
San José 3
Santo Domingo 3
Shanghai 3
São Paulo 3
Taichung 3
Taipei 3
Tashkent 3
Tbilisi 3
Tomsk 3
Toronto 3
Ulan Bator 3
Yerevan 3
Abidjan 2
Accra 2
Almaty 2
Amman 2
Baku 2
Bamako 2
Belize City 2
Bishkek 2
Borås 2
Castries 2
Central 2
Changsha 2
Chennai 2
Conakry 2
Dili 2
Djibouti 2
Dushanbe 2
Farra di Soligo 2
Fremont 2
Grenoble 2
Indiana 2
Istanbul 2
Johannesburg 2
Kaohsiung 2
Kigali 2
Kilburn 2
Kingston 2
Leawood 2
Les Abymes 2
Lima 2
Lisbon 2
London 2
Luanda 2
Manchester 2
Mexico City 2
Mogadishu 2
Montreal 2
Nagoya 2
New Delhi 2
Nicosia 2
Papeete 2
Totale 1.393
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Nome #
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 210
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 189
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 159
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 153
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 152
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 139
Open issues in GaN-based HEMTs: performances, parasitics and reliability 134
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 127
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 119
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 103
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 98
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 92
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 91
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 87
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 77
Totale 1.930
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Categoria #
all - tutte 6.295
article - articoli 3.048
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.343
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202196 0 0 6 7 8 11 8 12 15 6 14 9
2021/2022174 7 24 30 13 5 6 7 20 9 2 14 37
2022/2023145 22 4 4 8 34 26 3 10 27 0 6 1
2023/2024101 18 11 4 9 5 5 18 6 2 6 6 11
2024/2025379 2 37 17 21 53 34 16 40 20 11 61 67
2025/2026336 42 141 153 0 0 0 0 0 0 0 0 0
Totale 1.930