ZANANDREA, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 1.638
AS - Asia 733
EU - Europa 382
AF - Africa 86
SA - Sud America 79
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 13
Totale 2.947
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Nazione #
US - Stati Uniti d'America 1.581
SG - Singapore 269
CN - Cina 143
IT - Italia 97
VN - Vietnam 69
HK - Hong Kong 51
DE - Germania 38
BR - Brasile 37
FI - Finlandia 36
BD - Bangladesh 34
PL - Polonia 32
FR - Francia 28
IN - India 21
GB - Regno Unito 19
JP - Giappone 19
RU - Federazione Russa 16
TW - Taiwan 15
CA - Canada 14
SE - Svezia 14
IQ - Iraq 11
NL - Olanda 11
IE - Irlanda 10
TR - Turchia 10
CO - Colombia 9
ID - Indonesia 9
KR - Corea 9
GE - Georgia 8
ES - Italia 7
UA - Ucraina 7
UZ - Uzbekistan 7
VE - Venezuela 7
AL - Albania 6
GM - Gambi 6
MX - Messico 6
ZA - Sudafrica 6
AT - Austria 5
AU - Australia 5
CR - Costa Rica 5
LA - Repubblica Popolare Democratica del Laos 5
MA - Marocco 5
MR - Mauritania 5
PH - Filippine 5
AM - Armenia 4
AO - Angola 4
AR - Argentina 4
BZ - Belize 4
CL - Cile 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
EC - Ecuador 4
KE - Kenya 4
LU - Lussemburgo 4
MK - Macedonia 4
PE - Perù 4
PT - Portogallo 4
RS - Serbia 4
SA - Arabia Saudita 4
SK - Slovacchia (Repubblica Slovacca) 4
UY - Uruguay 4
XK - ???statistics.table.value.countryCode.XK??? 4
BG - Bulgaria 3
CH - Svizzera 3
CI - Costa d'Avorio 3
CM - Camerun 3
DJ - Gibuti 3
GF - Guiana Francese 3
GN - Guinea 3
IS - Islanda 3
JM - Giamaica 3
JO - Giordania 3
KG - Kirghizistan 3
LV - Lettonia 3
LY - Libia 3
MN - Mongolia 3
MU - Mauritius 3
MY - Malesia 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PK - Pakistan 3
SO - Somalia 3
TJ - Tagikistan 3
TZ - Tanzania 3
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
BJ - Benin 2
BW - Botswana 2
CV - Capo Verde 2
CW - ???statistics.table.value.countryCode.CW??? 2
CY - Cipro 2
DM - Dominica 2
DZ - Algeria 2
EE - Estonia 2
ET - Etiopia 2
EU - Europa 2
GH - Ghana 2
GP - Guadalupe 2
GR - Grecia 2
GT - Guatemala 2
HN - Honduras 2
HR - Croazia 2
Totale 2.871
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Città #
Ashburn 214
San Jose 175
Singapore 150
Woodbridge 130
Ann Arbor 124
Houston 123
Fairfield 119
Seattle 78
Santa Clara 55
Wilmington 54
Chandler 48
Cambridge 46
Hong Kong 46
Beijing 43
Council Bluffs 40
Bytom 26
Boardman 25
Hanoi 22
Helsinki 21
Des Moines 19
Medford 15
Princeton 15
Lauterbourg 14
Los Angeles 14
Ho Chi Minh City 13
Padova 12
San Diego 12
Tokyo 12
Dublin 10
Nanjing 10
Buffalo 9
New York 8
Cagliari 7
Tashkent 7
Dallas 6
Delhi 6
Mestre 6
Milan 6
Modena 6
Orem 6
Columbus 5
Guangzhou 5
Nouakchott 5
Tbilisi 5
Toronto 5
Brooklyn 4
Chennai 4
Da Nang 4
Haiphong 4
Hefei 4
Luanda 4
Manchester 4
Montevideo 4
Munich 4
Nairobi 4
Shanghai 4
Shenyang 4
São Paulo 4
Taichung 4
Vientiane 4
Warsaw 4
Yerevan 4
Abidjan 3
Amman 3
Baghdad 3
Bandung 3
Belize City 3
Bengaluru 3
Bishkek 3
Bratislava 3
Cayenne 3
Conakry 3
Daegu 3
Dar es Salaam 3
Dushanbe 3
Falkenstein 3
Frankfurt am Main 3
Hebei 3
Hsinchu 3
Hải Dương 3
Istanbul 3
Kuala Lumpur 3
Lima 3
Mogadishu 3
Montreal 3
Naples 3
North Bergen 3
Parma 3
Riga 3
Rio de Janeiro 3
Rome 3
San José 3
Santo Domingo 3
Skopje 3
Taipei 3
Tirana 3
Tomsk 3
Turin 3
Ulan Bator 3
Vienna 3
Totale 1.959
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Nome #
Open issues in GaN-based HEMTs: performances, parasitics and reliability 300
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 293
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 245
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 243
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 226
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 212
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 200
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 183
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 180
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 165
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 151
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 144
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 144
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 135
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 126
Totale 2.947
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Categoria #
all - tutte 8.522
article - articoli 4.006
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.528
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022143 0 0 30 13 5 6 7 20 9 2 14 37
2022/2023145 22 4 4 8 34 26 3 10 27 0 6 1
2023/2024101 18 11 4 9 5 5 18 6 2 6 6 11
2024/2025379 2 37 17 21 53 34 16 40 20 11 61 67
2025/20261.242 42 141 156 118 147 48 141 129 108 81 81 50
2026/2027111 35 59 17 0 0 0 0 0 0 0 0 0
Totale 2.947