statistiche ricercatore

Continente	#
NA - Nord America	1.033
EU - Europa	175
AS - Asia	161
Continente sconosciuto - Info sul continente non disponibili	2
Totale	1.371

Nome	#
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress	167
GaN-HEMTs devices with single- and double-heterostructure for power switching applications	145
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions	118
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues	117
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs	108
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate	107
Single- and double-heterostructure GaN-HEMTs devices for power switching applications	94
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences	85
Open issues in GaN-based HEMTs: performances, parasitics and reliability	77
Characterization Of Gan-Based Single- And Double-Heterostructure Devices	74
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress	65
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications	62
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices	59
Evidence for breakdown luminescence in AlGaN/GaN HEMTs	52
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation	49
Totale	1.379

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	156	0	0	0	0	0	16	18	29	26	27	35	5
2020/2021	114	7	11	6	7	8	11	8	12	15	6	14	9
2021/2022	174	7	24	30	13	5	6	7	20	9	2	14	37
2022/2023	145	22	4	4	8	34	26	3	10	27	0	6	1
2023/2024	101	18	11	4	9	5	5	18	6	2	6	6	11
2024/2025	164	2	37	17	21	53	34	0	0	0	0	0	0
Totale													1.379