The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as ID -VDS kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage
Breakdown and low-temperature anomalous effects in 6H SiC JFETs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1998
Abstract
The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as ID -VDS kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage
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