This paper reviews results of a study concerning the effects of hot electrons on the degradation of GaAs MESFETs and HEMTs. Gate current measurements are adopted as a tool to characterize hot electron effects. Degradation consists of a decrease of drain current and is correlated to the gate current to drain current ratio.
Reliability issues due to hot-electron effects in GaAs-based MESFETs and HEMTs
ZANONI, ENRICO;NEVIANI, ANDREA;MENEGHESSO, GAUDENZIO
1994
Abstract
This paper reviews results of a study concerning the effects of hot electrons on the degradation of GaAs MESFETs and HEMTs. Gate current measurements are adopted as a tool to characterize hot electron effects. Degradation consists of a decrease of drain current and is correlated to the gate current to drain current ratio.
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