Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMT's characterized by a delta doping inserted in the undoped AlGaAs layer and by an additional planar doping within the InGaAs channel, suitable for high-power applications. Impact ionization has been demonstrated to be the limiting effect for high V(ds) applications. Emission spectra in the 1.1-2.6 eV range have been analyzed showing peaks at low energy due to recombination mechanisms and a long tail due to hot electrons.
Impact Ionization and Light-emission In High-power Pseudomorphic AlGaAs/InGaAs HEMTs
ZANONI, ENRICO;
1993
Abstract
Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMT's characterized by a delta doping inserted in the undoped AlGaAs layer and by an additional planar doping within the InGaAs channel, suitable for high-power applications. Impact ionization has been demonstrated to be the limiting effect for high V(ds) applications. Emission spectra in the 1.1-2.6 eV range have been analyzed showing peaks at low energy due to recombination mechanisms and a long tail due to hot electrons.
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