We subjected III–V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown.
Effects of Positive and Negative Stresses on III-V MOSFETs With Al(2)O(3) Gate Dielectric
WRACHIEN, NICOLA;CESTER, ANDREA;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2011
Abstract
We subjected III–V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
