The high-field behaviour of devices fabricated on wide band-gap semiconductors is closely related to parasitic effects induced by carrier capture and emission by deep levels or by partially ionized impurities, in the presence of impact-ionization. The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. The study has been carried out using devices fabricated by vacuum sublimation epitaxy on high-quality 6H n-type SiC platelets grown by an unmodifed Lely process
High field and low temperature behaviour of Lely-grown 6H SiC buried gate JFETs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1999
Abstract
The high-field behaviour of devices fabricated on wide band-gap semiconductors is closely related to parasitic effects induced by carrier capture and emission by deep levels or by partially ionized impurities, in the presence of impact-ionization. The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. The study has been carried out using devices fabricated by vacuum sublimation epitaxy on high-quality 6H n-type SiC platelets grown by an unmodifed Lely process
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