We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
NEVIANI, ANDREA;ZANONI, ENRICO;
1996
Abstract
We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment
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