FABRIS, ELENA
 Distribuzione geografica
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Continente #
NA - Nord America 1.776
AS - Asia 1.046
EU - Europa 452
AF - Africa 166
SA - Sud America 128
Continente sconosciuto - Info sul continente non disponibili 34
OC - Oceania 12
Totale 3.614
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Nazione #
US - Stati Uniti d'America 1.670
SG - Singapore 320
CN - Cina 215
HK - Hong Kong 119
VN - Vietnam 115
IT - Italia 84
BR - Brasile 68
IN - India 55
PL - Polonia 47
FR - Francia 37
DE - Germania 34
FI - Finlandia 25
SE - Svezia 25
BD - Bangladesh 21
CA - Canada 21
GB - Regno Unito 19
JP - Giappone 19
IQ - Iraq 18
PK - Pakistan 15
RU - Federazione Russa 15
AT - Austria 14
AR - Argentina 13
BJ - Benin 13
KR - Corea 13
NL - Olanda 13
CH - Svizzera 12
ES - Italia 12
UA - Ucraina 12
CI - Costa d'Avorio 11
CO - Colombia 11
MX - Messico 11
EC - Ecuador 10
ZA - Sudafrica 10
JM - Giamaica 9
PH - Filippine 9
TR - Turchia 9
AL - Albania 8
AO - Angola 8
EE - Estonia 8
IL - Israele 8
IR - Iran 8
MY - Malesia 8
CL - Cile 7
CR - Costa Rica 7
ID - Indonesia 7
JO - Giordania 7
MG - Madagascar 7
PA - Panama 7
XK - ???statistics.table.value.countryCode.XK??? 7
BE - Belgio 6
BY - Bielorussia 6
CV - Capo Verde 6
CY - Cipro 6
KE - Kenya 6
KG - Kirghizistan 6
MD - Moldavia 6
MW - Malawi 6
NI - Nicaragua 6
TW - Taiwan 6
UY - Uruguay 6
AZ - Azerbaigian 5
BG - Bulgaria 5
BW - Botswana 5
CD - Congo 5
DM - Dominica 5
DO - Repubblica Dominicana 5
GH - Ghana 5
GR - Grecia 5
IE - Irlanda 5
IS - Islanda 5
LA - Repubblica Popolare Democratica del Laos 5
LY - Libia 5
MN - Mongolia 5
NC - Nuova Caledonia 5
NP - Nepal 5
PS - Palestinian Territory 5
SA - Arabia Saudita 5
SK - Slovacchia (Repubblica Slovacca) 5
TZ - Tanzania 5
UZ - Uzbekistan 5
YE - Yemen 5
YT - Mayotte 5
AU - Australia 4
BO - Bolivia 4
BS - Bahamas 4
CW - ???statistics.table.value.countryCode.CW??? 4
DJ - Gibuti 4
DK - Danimarca 4
DZ - Algeria 4
EG - Egitto 4
ET - Etiopia 4
GM - Gambi 4
HN - Honduras 4
HR - Croazia 4
LU - Lussemburgo 4
MK - Macedonia 4
SI - Slovenia 4
SO - Somalia 4
TH - Thailandia 4
TN - Tunisia 4
Totale 3.469
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Città #
Ashburn 231
San Jose 196
Singapore 176
Fairfield 167
Hong Kong 91
Chandler 80
Cambridge 72
Houston 68
Santa Clara 68
Seattle 57
Ann Arbor 56
Beijing 55
Woodbridge 53
Los Angeles 44
Wilmington 44
Bytom 38
New York 37
Boardman 32
Council Bluffs 30
Ho Chi Minh City 28
Hanoi 27
Medford 20
Princeton 20
Helsinki 19
Orem 18
San Diego 18
Lauterbourg 15
Cotonou 13
Des Moines 13
Central 12
Guangzhou 12
Abidjan 11
Bengaluru 11
Chennai 11
Dallas 11
Munich 11
Padova 11
Tokyo 11
Vienna 11
Atlanta 10
Buffalo 10
Denver 10
Montreal 10
Washington 10
Haiphong 9
Hwaseong-si 9
Chicago 8
Nuremberg 8
São Paulo 8
Amman 7
Lahore 7
Rio de Janeiro 7
Basel 6
Bishkek 6
Da Nang 6
Kingston 6
Managua 6
Montevideo 6
Shanghai 6
Amsterdam 5
Boston 5
Charlotte 5
Dublin 5
Johannesburg 5
Kharkiv 5
Limassol 5
London 5
Luanda 5
Minsk 5
Nairobi 5
Nanjing 5
Noumea 5
Panama City 5
Poplar 5
Pristina 5
Roseau 5
San José 5
Tallinn 5
Tashkent 5
Turku 5
Ulan Bator 5
Warsaw 5
Accra 4
Antananarivo 4
Athens 4
Baku 4
Dar es Salaam 4
Djibouti 4
Gaborone 4
Kinshasa 4
Lilongwe 4
Ljubljana 4
Mumbai 4
Patna 4
Praia 4
Ranchi 4
Redondo Beach 4
San Francisco 4
Stockholm 4
The Dalles 4
Totale 2.240
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Nome #
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 272
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 249
Degradation physics of GaN-based lateral and vertical devices 249
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 201
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 201
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 196
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 191
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 191
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 190
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 186
Degradation of GaN-on-GaN vertical diodes submitted to high current stress 185
GaN Vertical p-i-n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation 171
Degradation Mechanisms of GaN-Based Vertical Devices: A Review 168
Gallium Nitride power devices: challenges and perspectives 156
Recent Advancements in Power GaN Reliability 143
Challenges towards highly reliable GaN power transistors 138
Trapping and Detrapping Mechanisms in β-GaO Vertical FinFETs Investigated by Electro-Optical Measurements 138
Avalanche capability and recoverable breakdown walkout in polarization-doped vertical GaN pn diodes 137
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 130
Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 122
Totale 3.614
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Categoria #
all - tutte 10.826
article - articoli 4.148
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.974
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022212 0 29 33 9 6 14 10 20 12 4 16 59
2022/2023204 31 8 10 12 44 25 0 15 28 1 9 21
2023/2024152 5 14 30 8 15 37 5 0 6 7 11 14
2024/2025485 1 24 11 32 71 32 13 67 24 15 83 112
2025/20261.851 108 140 195 284 211 77 297 160 185 118 61 15
2026/2027134 95 39 0 0 0 0 0 0 0 0 0 0
Totale 3.614