RENSO, NICOLA
 Distribuzione geografica
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Continente #
NA - Nord America 1.087
AS - Asia 473
EU - Europa 357
AF - Africa 106
SA - Sud America 86
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 7
Totale 2.126
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Nazione #
US - Stati Uniti d'America 1.039
SG - Singapore 170
IT - Italia 115
CN - Cina 105
HK - Hong Kong 59
BR - Brasile 45
PL - Polonia 36
DE - Germania 26
NL - Olanda 25
VN - Vietnam 25
FI - Finlandia 23
IN - India 18
SE - Svezia 18
AT - Austria 9
JP - Giappone 9
CI - Costa d'Avorio 8
GB - Regno Unito 8
GF - Guiana Francese 8
KH - Cambogia 8
RU - Federazione Russa 8
AM - Armenia 7
BE - Belgio 7
CV - Capo Verde 7
EG - Egitto 7
FR - Francia 7
VE - Venezuela 7
AR - Argentina 6
CW - ???statistics.table.value.countryCode.CW??? 6
ID - Indonesia 6
IE - Irlanda 6
IL - Israele 6
JO - Giordania 6
SN - Senegal 6
BS - Bahamas 5
CH - Svizzera 5
CZ - Repubblica Ceca 5
EC - Ecuador 5
GN - Guinea 5
KR - Corea 5
MA - Marocco 5
MR - Mauritania 5
PY - Paraguay 5
TR - Turchia 5
YT - Mayotte 5
AL - Albania 4
AU - Australia 4
BZ - Belize 4
CY - Cipro 4
HN - Honduras 4
HR - Croazia 4
LA - Repubblica Popolare Democratica del Laos 4
ME - Montenegro 4
MW - Malawi 4
MX - Messico 4
NO - Norvegia 4
PA - Panama 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
UZ - Uzbekistan 4
VC - Saint Vincent e Grenadine 4
BG - Bulgaria 3
BW - Botswana 3
CD - Congo 3
CL - Cile 3
CO - Colombia 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
EE - Estonia 3
GP - Guadalupe 3
HU - Ungheria 3
KG - Kirghizistan 3
MK - Macedonia 3
ML - Mali 3
MU - Mauritius 3
PE - Perù 3
PR - Porto Rico 3
RW - Ruanda 3
SD - Sudan 3
SI - Slovenia 3
TW - Taiwan 3
UG - Uganda 3
AF - Afghanistan, Repubblica islamica di 2
AO - Angola 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BF - Burkina Faso 2
BY - Bielorussia 2
GE - Georgia 2
GM - Gambi 2
GR - Grecia 2
IR - Iran 2
KY - Cayman, isole 2
LC - Santa Lucia 2
LU - Lussemburgo 2
MG - Madagascar 2
MN - Mongolia 2
MZ - Mozambico 2
NA - Namibia 2
Totale 2.067
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Città #
Fairfield 159
Ashburn 111
Singapore 87
Ann Arbor 72
Chandler 70
Woodbridge 69
Houston 60
Santa Clara 58
Hong Kong 53
Cambridge 52
Seattle 51
Wilmington 51
Beijing 47
Bytom 33
Padova 31
Boardman 27
San Diego 24
Medford 18
Princeton 18
Helsinki 16
Des Moines 14
Pune 13
Ho Chi Minh City 11
Munich 8
Phnom Penh 8
Abidjan 7
Praia 7
Amman 6
Cagliari 6
Cayenne 6
Council Bluffs 6
Dakar 6
Dublin 6
Frankfurt am Main 6
Nanjing 6
Tokyo 6
Willemstad 6
Yerevan 6
Boston 5
Conakry 5
Hanoi 5
Los Angeles 5
Nassau 5
New York 5
Vienna 5
Brussels 4
Falkenstein 4
Guangzhou 4
Kingstown 4
Nouakchott 4
Panama City 4
Podgorica 4
Roxbury 4
Tashkent 4
Vientiane 4
Zurich 4
Asunción 3
Bamako 3
Belize City 3
Borås 3
Cairo 3
Caracas 3
Chicago 3
Hangzhou 3
Jakarta 3
Kampala 3
Kigali 3
Kinshasa 3
Lilongwe 3
Lima 3
Liège 3
Miami 3
Naples 3
Norwalk 3
Oslo 3
Prague 3
Salvador 3
Shanghai 3
Tallinn 3
Tel Aviv 3
Turku 3
Zagreb 3
Antananarivo 2
Baku 2
Belgrade 2
Belo Horizonte 2
Bishkek 2
Bratislava 2
Bridgetown 2
Brisbane 2
Casablanca 2
Castries 2
Chennai 2
Dushanbe 2
Edinburgh 2
Gaborone 2
George Town 2
Giza 2
Guayaquil 2
Hargeisa 2
Totale 1.434
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Nome #
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 186
Evidence for avalanche generation in reverse-biased InGaN LEDs 168
Challenges for highly reliable GaN-based LEDs 154
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 150
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 145
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 135
Origin of the low-forward leakage current in InGaN-based LEDs 129
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 128
Evidence of optically induced degradation in gallium nitride optoelectronic devices 127
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 126
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 116
Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs 108
Demonstration of band-to-band tunneling and avalanche regime in InGaN LEDs 90
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 88
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 85
Photon-driven degradation processes in GaN-based optoelectronic devices 81
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 68
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 68
Totale 2.152
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Categoria #
all - tutte 7.218
article - articoli 2.857
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.075
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021103 0 0 0 0 4 3 6 23 20 18 16 13
2021/2022212 13 30 28 22 0 5 16 24 5 6 21 42
2022/2023220 33 3 1 10 41 27 2 30 40 0 27 6
2023/2024116 7 12 0 2 3 35 20 7 6 7 8 9
2024/2025408 1 7 10 22 57 41 28 41 6 6 69 120
2025/2026605 41 114 169 202 79 0 0 0 0 0 0 0
Totale 2.152