RENSO, NICOLA
 Distribuzione geografica
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Continente #
NA - Nord America 958
EU - Europa 157
AS - Asia 135
OC - Oceania 1
SA - Sud America 1
Totale 1.252
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Nazione #
US - Stati Uniti d'America 958
IT - Italia 101
CN - Cina 70
SG - Singapore 39
IN - India 15
SE - Svezia 15
FI - Finlandia 9
DE - Germania 6
FR - Francia 6
IE - Irlanda 5
GB - Regno Unito 4
JP - Giappone 4
NL - Olanda 4
HK - Hong Kong 3
BE - Belgio 2
CH - Svizzera 2
IL - Israele 2
AT - Austria 1
AU - Australia 1
BR - Brasile 1
HR - Croazia 1
MO - Macao, regione amministrativa speciale della Cina 1
NP - Nepal 1
UA - Ucraina 1
Totale 1.252
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Città #
Fairfield 159
Ashburn 98
Ann Arbor 72
Chandler 70
Woodbridge 69
Houston 59
Santa Clara 56
Cambridge 52
Seattle 51
Wilmington 51
Singapore 32
Beijing 27
Boardman 27
San Diego 24
Padova 22
Medford 18
Princeton 18
Des Moines 14
Pune 13
Helsinki 8
Cagliari 6
Nanjing 6
Dublin 5
Guangzhou 4
Roxbury 4
Tokyo 4
Borås 3
Hangzhou 3
Naples 3
New York 3
Norwalk 3
Shanghai 3
Brussels 2
Chicago 2
Edinburgh 2
Los Angeles 2
Munich 2
Nanchang 2
Paris 2
Scorzè 2
Tel Aviv 2
Zurich 2
Andover 1
Birmingham 1
Brisbane 1
Changsha 1
Columbus 1
Dallas 1
Elspeet 1
Groningen 1
Hebei 1
Hong Kong 1
Imperia 1
Jinan 1
Kathmandu 1
London 1
Maasbommel 1
Macao 1
Miami 1
New Delhi 1
Philadelphia 1
Pignone 1
Redwood City 1
Rome 1
Shenyang 1
São Paulo 1
Tappahannock 1
Tianjin 1
Tuenno 1
Vienna 1
Zagreb 1
Zhengzhou 1
Totale 1.037
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Nome #
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 127
Evidence for avalanche generation in reverse-biased InGaN LEDs 111
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 96
Challenges for highly reliable GaN-based LEDs 95
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 91
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 90
Origin of the low-forward leakage current in InGaN-based LEDs 85
Evidence of optically induced degradation in gallium nitride optoelectronic devices 75
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 73
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 71
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 70
Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs 58
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 51
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 45
Demonstration of band-to-band tunneling and avalanche regime in InGaN LEDs 40
Photon-driven degradation processes in GaN-based optoelectronic devices 37
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 32
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 30
Totale 1.277
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Categoria #
all - tutte 5.009
article - articoli 2.077
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.086
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020214 0 0 0 0 0 19 25 34 37 76 10 13
2020/2021169 26 13 22 5 4 3 6 23 20 18 16 13
2021/2022212 13 30 28 22 0 5 16 24 5 6 21 42
2022/2023220 33 3 1 10 41 27 2 30 40 0 27 6
2023/2024116 7 12 0 2 3 35 20 7 6 7 8 9
2024/2025138 1 7 10 22 57 41 0 0 0 0 0 0
Totale 1.277