RENSO, NICOLA
 Distribuzione geografica
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Continente #
NA - Nord America 1.142
AS - Asia 551
EU - Europa 368
AF - Africa 108
SA - Sud America 89
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 7
Totale 2.275
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Nazione #
US - Stati Uniti d'America 1.092
SG - Singapore 218
CN - Cina 128
IT - Italia 115
HK - Hong Kong 59
BR - Brasile 47
PL - Polonia 36
DE - Germania 28
NL - Olanda 26
VN - Vietnam 25
FI - Finlandia 23
IN - India 20
SE - Svezia 19
JP - Giappone 11
KH - Cambogia 10
AT - Austria 9
GB - Regno Unito 9
CI - Costa d'Avorio 8
EG - Egitto 8
GF - Guiana Francese 8
RU - Federazione Russa 8
AM - Armenia 7
AR - Argentina 7
BE - Belgio 7
CV - Capo Verde 7
FR - Francia 7
IL - Israele 7
VE - Venezuela 7
CH - Svizzera 6
CW - ???statistics.table.value.countryCode.CW??? 6
ID - Indonesia 6
IE - Irlanda 6
JO - Giordania 6
SN - Senegal 6
BS - Bahamas 5
CZ - Repubblica Ceca 5
EC - Ecuador 5
GN - Guinea 5
HU - Ungheria 5
KR - Corea 5
MA - Marocco 5
MR - Mauritania 5
PY - Paraguay 5
TR - Turchia 5
YT - Mayotte 5
AL - Albania 4
AU - Australia 4
BZ - Belize 4
CY - Cipro 4
HN - Honduras 4
HR - Croazia 4
LA - Repubblica Popolare Democratica del Laos 4
ME - Montenegro 4
MW - Malawi 4
MX - Messico 4
NO - Norvegia 4
PA - Panama 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
UZ - Uzbekistan 4
VC - Saint Vincent e Grenadine 4
BG - Bulgaria 3
BW - Botswana 3
CA - Canada 3
CD - Congo 3
CL - Cile 3
CO - Colombia 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
EE - Estonia 3
ES - Italia 3
GP - Guadalupe 3
KG - Kirghizistan 3
MK - Macedonia 3
ML - Mali 3
MU - Mauritius 3
PE - Perù 3
PR - Porto Rico 3
RW - Ruanda 3
SD - Sudan 3
SI - Slovenia 3
SO - Somalia 3
TW - Taiwan 3
UG - Uganda 3
AF - Afghanistan, Repubblica islamica di 2
AO - Angola 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BF - Burkina Faso 2
BY - Bielorussia 2
GE - Georgia 2
GM - Gambi 2
GR - Grecia 2
IR - Iran 2
KY - Cayman, isole 2
LC - Santa Lucia 2
LU - Lussemburgo 2
MG - Madagascar 2
Totale 2.213
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Città #
Fairfield 159
Ashburn 122
Singapore 113
Ann Arbor 72
Chandler 70
Woodbridge 69
Houston 61
Santa Clara 59
Beijing 54
Hong Kong 53
Cambridge 52
Seattle 51
Wilmington 51
Bytom 33
Padova 31
Boardman 27
San Diego 24
Medford 18
Princeton 18
Helsinki 16
Des Moines 14
San Jose 14
Pune 13
Ho Chi Minh City 11
New York 10
Phnom Penh 10
Munich 8
Abidjan 7
Frankfurt am Main 7
Los Angeles 7
Praia 7
Tokyo 7
Amman 6
Boston 6
Cagliari 6
Cayenne 6
Council Bluffs 6
Dakar 6
Dublin 6
Nanjing 6
Willemstad 6
Yerevan 6
Conakry 5
Hanoi 5
Nassau 5
Vienna 5
Zurich 5
Brussels 4
Falkenstein 4
Guangzhou 4
Kingstown 4
Nouakchott 4
Panama City 4
Podgorica 4
Roxbury 4
Tashkent 4
Vientiane 4
Asunción 3
Bamako 3
Belize City 3
Borås 3
Cairo 3
Caracas 3
Chicago 3
Hangzhou 3
Hargeisa 3
Jakarta 3
Kampala 3
Kigali 3
Kinshasa 3
Lilongwe 3
Lima 3
Liège 3
Miami 3
Naples 3
Norwalk 3
Oslo 3
Prague 3
Salvador 3
Shanghai 3
São Paulo 3
Tallinn 3
Tel Aviv 3
Turku 3
Zagreb 3
Amsterdam 2
Antananarivo 2
Baku 2
Belgrade 2
Belo Horizonte 2
Bishkek 2
Bratislava 2
Bridgetown 2
Brisbane 2
Casablanca 2
Castries 2
Chennai 2
Dushanbe 2
Edinburgh 2
Gaborone 2
Totale 1.507
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Nome #
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 200
Evidence for avalanche generation in reverse-biased InGaN LEDs 178
Challenges for highly reliable GaN-based LEDs 166
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 155
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 151
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 145
Origin of the low-forward leakage current in InGaN-based LEDs 136
Evidence of optically induced degradation in gallium nitride optoelectronic devices 134
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 134
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 133
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 131
Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs 116
Demonstration of band-to-band tunneling and avalanche regime in InGaN LEDs 98
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 95
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 93
Photon-driven degradation processes in GaN-based optoelectronic devices 91
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 73
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 72
Totale 2.301
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Categoria #
all - tutte 7.582
article - articoli 2.984
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.566
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202196 0 0 0 0 0 0 6 23 20 18 16 13
2021/2022212 13 30 28 22 0 5 16 24 5 6 21 42
2022/2023220 33 3 1 10 41 27 2 30 40 0 27 6
2023/2024116 7 12 0 2 3 35 20 7 6 7 8 9
2024/2025408 1 7 10 22 57 41 28 41 6 6 69 120
2025/2026754 41 114 169 202 152 50 26 0 0 0 0 0
Totale 2.301