DRIGO, ANTONIO
DRIGO, ANTONIO
'Experimental Evidence of 2D-3D transition in the Stranski-Krastanow coherent growth'
1997 Berti, Marina; Drigo, Antonio; Rossetto, G.; Torzo, G.
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures
1998 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; A., Sambo; S., Zerlauth; J., Stangl; G., Bauer; F., Schaffler
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures
1998 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Romanato, Filippo; A., Sambo; S., Zerlauth; J., Stangl; F., Schäffler; G., Bauer
A systematic investigation of strain relaxation, surface morphology and defects in tensile and compressive InGaAs/InP layers
2000 Ferrari, C.; Lazzarini, L.; Salviati, G.; Natali, M.; Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Rossetto, G.; Torzo, G.
Anomalous low-temperature dopant diffusivity and defect structure in Sb-implanted and Sb/B-implanted annealed silicon samples
1995 A., Armigliato; Romanato, Filippo; Drigo, Antonio; Carnera, Alberto; C., Brizard; J. R., Regnard; J. L., Allain
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System
1999 Germini, F.; Bocchi, C.; Ferrari, C.; Franchi, S.; Baraldi, A.; Magnanini, R.; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio
Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation
1999 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Stangl, J.; Schaffler, F.; Zerlauth, S.; Bauer, G.
Behaviour of metastable si1-yCy epilayers under 2 MeV alpha particles irradiation
1999 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Stangl, J; Schaffler, F; Zerlauth, S; Bauer, G.
Bond lenght variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness
1999 M., Tormen; DE SALVADOR, Davide; M., Natali; Drigo, Antonio; Romanato, Filippo; G., Rossetto; F., Boscherini; S., Mobilio
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers
1998 Romanato, Filippo; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio; M., Natali; M., Tormen; G., Rossetto; S., Pascarelli; F., Boscherini; C., Lamberti; S., Mobilio
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57, pg 14 619, 1998)
1998 Romanato, Filippo; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio; M., Natali; M., Tormen; G., Rossetto; S., Pascarelli; F., Boscherini; C., Lamberti; S., Mobilio
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain
2004 Bisognin, Gabriele; DE SALVADOR, Davide; Napolitani, Enrico; Aldegheri, L; Berti, Marina; Carnera, Alberto; Drigo, Antonio; Mirabella, S; Bruno, E; Impellizzeri, G; Priolo, F.
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers
2000 Pomarico, A.; Lomascolo, M.; Passaseo, A.; Cingolani, R.; Berti, Marina; Napolitani, Enrico; Natali, M.; Sinha, S. K.; Drigo, Antonio
Carbon diffusion and clustering in SiGeC layers under thermal oxidation
2001 DE SALVADOR, Davide; Napolitani, Enrico; Coati, A.; Berti, Marina; Drigo, Antonio; Carroll, M.; Sturm, J. C.; Stangl, J.; Bauer, G.; Lazzarini, L.
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection
2002 DE SALVADOR, Davide; Coati, A; Napolitani, Enrico; Berti, Marina; Drigo, Antonio; Carroll, Ms; Sturm, Jc; Stangl, J; Bauer, G; Lazzarini, L.
Charge storage and screening of the internal field in GaN/AlGaN quantum wells
2001 Traetta, G.; DI CARLO, A.; Reale, A.; Lugli, P.; Lomascolo, M.; Passaseo, A.; Cingolani, R.; Bonfiglio, A.; Berti, Marina; Napolitani, Enrico; Natali, M.; Sinha, S. K.; Drigo, Antonio
Coherence length of strain relaxation mechanisms in InGaAs/GaAs[001] graded buffer layer
1999 Romanato, Filippo; M., Natali; Napolitani, Enrico; DE SALVADOR, Davide; Drigo, Antonio; S., Gennari; C., Ferrari; S., Franchi; G., Salviati
Composition and structure of Si-Ge layers produced by ion implantation and laser melting
1991 Berti, Marina; G., Mazzi; L., Calcagnile; Drigo, Antonio; P. G., Merli; A., Migliori
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution
2000 Romanato, Filippo; M., Natali; Napolitani, Enrico; Drigo, Antonio
Continuously graded buffers for InGaAs/GaAs structures grown on GaAs
1997 A., Bosacchi; A. C., Dericcardis; P., Frigeri; S., Franchi; C., Ferrari; S., Gennari; L., Lazzarini; L., Nasi; G., Salviati; Drigo, Antonio; Romanato, Filippo