NAPOLITANI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 13.351
AS - Asia 1.819
EU - Europa 1.667
SA - Sud America 54
AF - Africa 17
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 16.917
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Nazione #
US - Stati Uniti d'America 13.332
SG - Singapore 990
CN - Cina 595
IT - Italia 403
FI - Finlandia 294
DE - Germania 217
UA - Ucraina 167
SE - Svezia 132
FR - Francia 128
RU - Federazione Russa 114
GB - Regno Unito 108
HK - Hong Kong 106
VN - Vietnam 69
BR - Brasile 49
IE - Irlanda 35
IN - India 23
AT - Austria 20
NL - Olanda 20
CA - Canada 14
JP - Giappone 11
CI - Costa d'Avorio 9
TR - Turchia 7
AU - Australia 5
CH - Svizzera 5
ES - Italia 5
EU - Europa 4
KR - Corea 4
MX - Messico 4
NG - Nigeria 4
BE - Belgio 3
LT - Lituania 3
PT - Portogallo 3
TW - Taiwan 3
BG - Bulgaria 2
CO - Colombia 2
GR - Grecia 2
MA - Marocco 2
RO - Romania 2
ZA - Sudafrica 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
AZ - Azerbaigian 1
BD - Bangladesh 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EE - Estonia 1
IL - Israele 1
IQ - Iraq 1
IR - Iran 1
KG - Kirghizistan 1
LB - Libano 1
PH - Filippine 1
PK - Pakistan 1
PL - Polonia 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
VE - Venezuela 1
Totale 16.917
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Città #
Fairfield 2.498
Woodbridge 1.389
Houston 1.229
Ashburn 997
Seattle 910
Cambridge 846
Wilmington 810
Ann Arbor 773
Jacksonville 757
Chandler 563
Singapore 475
Boardman 314
Princeton 308
Santa Clara 299
San Diego 262
Padova 172
Beijing 164
Medford 122
Helsinki 119
Nanjing 107
Hong Kong 106
Des Moines 88
Dong Ket 67
Guangzhou 52
Roxbury 35
Dublin 34
Hebei 34
Milan 31
New York 31
Nanchang 27
Shenyang 26
London 25
Jiaxing 22
Norwalk 20
Tianjin 19
Jinan 15
Nuremberg 15
Indiana 13
Pune 12
Changsha 11
Falkenstein 10
Kilburn 10
Munich 10
Shanghai 10
Abidjan 9
Kharkiv 9
Rome 9
Vicenza 9
Washington 9
Brendola 8
Frankfurt am Main 8
Lappeenranta 8
Ravenna 8
Vienna 8
Ogden 7
Redwood City 7
Zhengzhou 7
Borås 6
Chiampo 6
Dallas 6
Los Angeles 6
Arce 5
Chiswick 5
Hounslow 5
Maserà di Padova 5
Phoenix 5
São Paulo 5
Turin 5
Verona 5
Agordo 4
Amsterdam 4
Cassino 4
Hefei 4
New Bedfont 4
Redmond 4
San Francisco 4
Toronto 4
Walnut Creek 4
Acton 3
Belo Horizonte 3
Bologna 3
Brussels 3
Cesena 3
Chieti 3
Falls Church 3
Genoa 3
Monmouth Junction 3
Ningbo 3
Nürnberg 3
Orange 3
Ottawa 3
Portoferraio 3
Rouen 3
Sydney 3
Tappahannock 3
Tokyo 3
Villorba 3
Xi'an 3
Berlin 2
Braga 2
Totale 14.107
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Nome #
B clustering in amorphous Si 143
Cerium based chemical conversion coating on AZ63 magnesium alloy 137
Surface properties of AZ91 magnesium alloy after PEO treatment using molybdate salts and low current densities 134
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing 124
Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon 123
Effects of helium ion bombardment on metallic gold and iridium thin films 121
Dissolution kinetics of B clusters in crystalline Si 120
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes 119
Preface for Proceedings of SIMS XVIII, Riva del Garda, Italy, 2011 119
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 117
Mechanism of B diffusion in crystalline Ge under proton irradiation 116
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 116
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 115
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 113
Effects of atmospheric pressure plasma JET treatment on aluminium alloys 113
Boron diffusion in extrinsically doped crystalline silicon 112
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling 111
The effect of surface treatment with atmospheric pressure plasma jet, generated by air, on corrosion properties of AISI 304L stainless steel 110
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 110
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon 110
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 108
Formation and dissolution of D-N complexes in dilute nitrides 108
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution 108
Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects 108
Study of solar wind ions implantation effects in optical coatings in view of Solar Orbiter space mission operation 108
Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers 107
Optical components in harsh space environment 107
Radiation enhanced diffusion of B in crystalline Ge 106
Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions 106
Ion Implantation Defects and Shallow Junctions in Si and Ge 105
Detailed arsenic concentration profiles at Si/SiO2 interfaces 104
Self-limiting Sb monolayer as a diffusion source for Ge doping 104
Iso-concentration study of atomistic mechanism of B diffusion in Si 103
Atomistic Mechanism of Boron Diffusion in Silicon 103
Preparation and characterisation of isotopically enriched Ta2O5 targets for nuclear astrophysics studies 103
Effect of strain on the carrier mobility in heavily doped p-type Si 103
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 102
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 101
Role of self-interstitials on B diffusion in Ge 101
B-doping in Ge by excimer laser annealing 101
A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching 100
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 100
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial regrowth of amorphous Si 100
Impurity and defect interactions during laser thermal annealing in Ge 100
He plus ion damage on optical coatings for solar missions 100
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 100
Point defect engineering in preamorphized silicon enriched with fluorine 100
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy 99
New developments in hpge detectors for high resolution detection 99
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection 98
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches 98
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 97
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 97
N-type doping of Ge by As implantation and excimer laser annealing 97
He implantation to control B diffusion in crystalline and preamorphized Si 97
Fluorine incorporation in preamorphized silicon 96
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 96
A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge 96
Erbium-oxygen interactions in crystalline silicon 96
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 96
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 95
Anomalous transport of Sb in laser irradiated Ge 95
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium 95
Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source 94
Fluorine segregation and incorporation during solid-phase epitaxy of Si 94
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures 94
Extended Point Defects in Crystalline Materials: Ge and Si 94
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications 94
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 94
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 93
Fluorine counter doping effect in B-doped Si 92
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 92
Advanced Diffusion Strategies for Junction Formation in Germanium 92
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 91
Electrical behavior of ultra-low energy implanted boron in silicon 90
Oxygen behavior in germanium during melting laser thermal annealing 90
Diffusion doping of germanium by sputtered antimony sources 90
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy 90
Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study 89
Microscopical aspects of boron diffusion in ultralow energy implanted silicon 88
Fluorine incorporation during Si solid phase epitaxy 88
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers 88
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers 88
Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy 88
First Direct Measurement of the O-17(p, gamma)F-18 Reaction Cross Section at Gamow Energies for Classical Novae 88
Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si 88
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium 88
Substitutional B in Si: Accurate lattice parameter determination 88
Mechanism of boron diffusion in amorphous silicon 87
Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy 87
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 86
Evidence for a new hydrogen complex in dilute nitride alloys 86
The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si 85
Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion 85
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si 85
C ion-implanted TiO2 thin film for photocatalytic applications 85
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals 85
Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron 84
Silicon interstitial injection during dry oxidation of SiGe/Si layers 84
Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient 84
Totale 10.014
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Categoria #
all - tutte 72.942
article - articoli 62.493
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.663
Totale 137.098
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020652 0 0 0 0 0 0 0 0 0 316 196 140
2020/20212.707 82 216 107 163 212 384 127 210 497 194 335 180
2021/20222.872 143 292 505 253 99 132 170 338 123 69 316 432
2022/20231.490 350 59 31 129 277 216 8 117 172 14 80 37
2023/2024885 38 176 85 58 40 85 40 28 28 46 112 149
2024/20252.326 36 365 165 120 566 137 213 295 426 3 0 0
Totale 17.176