NAPOLITANI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 13.256
EU - Europa 1.432
AS - Asia 1.276
AF - Africa 5
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 3
SA - Sud America 2
Totale 15.978
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Nazione #
US - Stati Uniti d'America 13.246
CN - Cina 593
SG - Singapore 565
IT - Italia 364
FI - Finlandia 285
UA - Ucraina 167
DE - Germania 166
SE - Svezia 132
FR - Francia 128
GB - Regno Unito 107
VN - Vietnam 69
IE - Irlanda 32
IN - India 23
RU - Federazione Russa 15
CA - Canada 10
NL - Olanda 9
JP - Giappone 7
HK - Hong Kong 6
CH - Svizzera 5
ES - Italia 5
EU - Europa 4
KR - Corea 4
NG - Nigeria 4
AT - Austria 3
AU - Australia 3
PT - Portogallo 3
TW - Taiwan 3
BE - Belgio 2
BG - Bulgaria 2
CO - Colombia 2
RO - Romania 2
TR - Turchia 2
EE - Estonia 1
GR - Grecia 1
IL - Israele 1
IR - Iran 1
LT - Lituania 1
PH - Filippine 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
ZA - Sudafrica 1
Totale 15.978
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Città #
Fairfield 2.498
Woodbridge 1.389
Houston 1.229
Ashburn 994
Seattle 910
Cambridge 846
Wilmington 809
Ann Arbor 773
Jacksonville 757
Chandler 563
Singapore 472
Boardman 314
Princeton 308
Santa Clara 299
San Diego 262
Beijing 164
Padova 163
Medford 122
Helsinki 110
Nanjing 107
Des Moines 88
Dong Ket 67
Guangzhou 51
Roxbury 35
Hebei 34
Dublin 32
New York 31
Milan 29
Nanchang 27
Shenyang 26
London 24
Jiaxing 22
Norwalk 20
Tianjin 19
Jinan 15
Indiana 13
Pune 12
Changsha 11
Kilburn 10
Munich 10
Shanghai 10
Kharkiv 9
Vicenza 9
Washington 9
Brendola 8
Lappeenranta 8
Ravenna 8
Frankfurt am Main 7
Ogden 7
Redwood City 7
Zhengzhou 7
Borås 6
Chiampo 6
Dallas 6
Hong Kong 6
Arce 5
Chiswick 5
Hounslow 5
Phoenix 5
Agordo 4
Cassino 4
Hefei 4
Los Angeles 4
New Bedfont 4
Redmond 4
San Francisco 4
Walnut Creek 4
Acton 3
Bologna 3
Cesena 3
Chieti 3
Falls Church 3
Genoa 3
Monmouth Junction 3
Ningbo 3
Nürnberg 3
Orange 3
Portoferraio 3
Rouen 3
Tappahannock 3
Tokyo 3
Verona 3
Villorba 3
Xi'an 3
Berlin 2
Braga 2
Bristol 2
Brussels 2
Buffalo 2
Centrale 2
Chicago 2
Chungcheongnam-do 2
Costabissara 2
Edinburgh 2
Forlimpopoli 2
Fuzhou 2
Geneva 2
Hangzhou 2
Hanoi 2
Jesolo 2
Totale 13.913
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Nome #
B clustering in amorphous Si 140
Surface properties of AZ91 magnesium alloy after PEO treatment using molybdate salts and low current densities 131
Cerium based chemical conversion coating on AZ63 magnesium alloy 130
Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon 122
Preface for Proceedings of SIMS XVIII, Riva del Garda, Italy, 2011 118
Dissolution kinetics of B clusters in crystalline Si 114
Mechanism of B diffusion in crystalline Ge under proton irradiation 114
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 114
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes 114
Effects of helium ion bombardment on metallic gold and iridium thin films 113
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 112
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 112
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 111
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing 110
Boron diffusion in extrinsically doped crystalline silicon 109
Effects of atmospheric pressure plasma JET treatment on aluminium alloys 107
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling 106
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 106
Formation and dissolution of D-N complexes in dilute nitrides 106
Radiation enhanced diffusion of B in crystalline Ge 105
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution 105
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 105
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon 105
Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects 105
Optical components in harsh space environment 105
Study of solar wind ions implantation effects in optical coatings in view of Solar Orbiter space mission operation 105
Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers 104
The effect of surface treatment with atmospheric pressure plasma jet, generated by air, on corrosion properties of AISI 304L stainless steel 103
Iso-concentration study of atomistic mechanism of B diffusion in Si 102
Ion Implantation Defects and Shallow Junctions in Si and Ge 102
Self-limiting Sb monolayer as a diffusion source for Ge doping 102
Detailed arsenic concentration profiles at Si/SiO2 interfaces 101
Preparation and characterisation of isotopically enriched Ta2O5 targets for nuclear astrophysics studies 101
Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions 101
Atomistic Mechanism of Boron Diffusion in Silicon 100
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 100
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 98
Effect of strain on the carrier mobility in heavily doped p-type Si 98
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy 97
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 96
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection 96
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial regrowth of amorphous Si 96
He plus ion damage on optical coatings for solar missions 96
Point defect engineering in preamorphized silicon enriched with fluorine 96
Erbium-oxygen interactions in crystalline silicon 95
New developments in hpge detectors for high resolution detection 95
B-doping in Ge by excimer laser annealing 95
A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching 94
Fluorine incorporation in preamorphized silicon 94
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 94
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 94
Role of self-interstitials on B diffusion in Ge 94
N-type doping of Ge by As implantation and excimer laser annealing 94
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 93
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures 93
A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge 93
He implantation to control B diffusion in crystalline and preamorphized Si 93
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 93
Fluorine segregation and incorporation during solid-phase epitaxy of Si 92
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 92
Extended Point Defects in Crystalline Materials: Ge and Si 92
Anomalous transport of Sb in laser irradiated Ge 92
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 92
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 91
Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source 90
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 90
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications 89
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches 89
Fluorine counter doping effect in B-doped Si 88
Oxygen behavior in germanium during melting laser thermal annealing 88
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium 87
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 87
Advanced Diffusion Strategies for Junction Formation in Germanium 87
Microscopical aspects of boron diffusion in ultralow energy implanted silicon 86
Electrical behavior of ultra-low energy implanted boron in silicon 86
Fluorine incorporation during Si solid phase epitaxy 86
Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study 86
Diffusion doping of germanium by sputtered antimony sources 86
Substitutional B in Si: Accurate lattice parameter determination 86
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers 85
Mechanism of boron diffusion in amorphous silicon 85
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers 85
Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy 85
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 85
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy 85
First Direct Measurement of the O-17(p, gamma)F-18 Reaction Cross Section at Gamow Energies for Classical Novae 84
Optimal process parameters for phosphorus spin-on-doping of germanium 84
Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion 83
Evidence for a new hydrogen complex in dilute nitride alloys 83
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium 83
Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron 82
The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si 82
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 82
Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient 82
Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy 82
Dissolution kinetics of boron-interstitial clusters in silicon 81
C ion-implanted TiO2 thin film for photocatalytic applications 81
Impurity and defect interactions during laser thermal annealing in Ge 81
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 81
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si 80
Totale 9.630
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Categoria #
all - tutte 66.820
article - articoli 57.348
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.470
Totale 125.638
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.154 0 0 0 0 0 317 348 444 393 316 196 140
2020/20212.707 82 216 107 163 212 384 127 210 497 194 335 180
2021/20222.872 143 292 505 253 99 132 170 338 123 69 316 432
2022/20231.490 350 59 31 129 277 216 8 117 172 14 80 37
2023/2024885 38 176 85 58 40 85 40 28 28 46 112 149
2024/20251.375 36 365 165 120 566 123 0 0 0 0 0 0
Totale 16.225