The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650 degrees C following O implants produces a band of defects (similar to 5-10 nm), compatible with GeO2 nanoclusters (NCs). A clear shape transformation from elongated to spherical forms occurs within 2 h, concomitant with a transient enhanced diffusion of B. A large injection of self-interstitials from GeO2 NCs, giving a vacancy undersaturation, and a long-range migration of self-interstitials are evidenced and discussed.
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters
NAPOLITANI, ENRICO;MASTROMATTEO, MASSIMO;DE SALVADOR, DAVIDE;CARNERA, ALBERTO;
2011
Abstract
The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650 degrees C following O implants produces a band of defects (similar to 5-10 nm), compatible with GeO2 nanoclusters (NCs). A clear shape transformation from elongated to spherical forms occurs within 2 h, concomitant with a transient enhanced diffusion of B. A large injection of self-interstitials from GeO2 NCs, giving a vacancy undersaturation, and a long-range migration of self-interstitials are evidenced and discussed.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
