The oxidation rate enhancement of epitaxial SiGe layers was studied and found to concern also the oxidation in dry environment, at least in the initial phase of the process. Enhancement increased with the Ge concentration apparently in a linear way. The RTO process produced a uniform epitaxial layer of Ge-enriched SiGe below the SiO2 film. Finally, it was proposed that a unified view must be considered for dry and wet SiGe oxidation to explain the observed GRE.
Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient
CARNERA, ALBERTO;DI MARINO, MARCO;NAPOLITANI, ENRICO
2003
Abstract
The oxidation rate enhancement of epitaxial SiGe layers was studied and found to concern also the oxidation in dry environment, at least in the initial phase of the process. Enhancement increased with the Ge concentration apparently in a linear way. The RTO process produced a uniform epitaxial layer of Ge-enriched SiGe below the SiO2 film. Finally, it was proposed that a unified view must be considered for dry and wet SiGe oxidation to explain the observed GRE.
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