statistiche ricercatore

Nome	#
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process	148
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry	148
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects	102
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability	84
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs	83
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level	76
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs	70
Totale	711

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	122	0	0	0	0	0	12	20	25	20	21	17	7
2020/2021	119	3	7	0	2	1	2	18	43	7	9	21	6
2021/2022	181	0	4	103	8	5	3	1	18	3	2	13	21
2022/2023	72	13	2	2	5	23	8	0	4	12	3	0	0
2023/2024	34	4	6	2	2	8	3	0	0	0	0	4	5
2024/2025	50	0	4	2	8	23	13	0	0	0	0	0	0
Totale													711