DE SALVADOR, DAVIDE
 Distribuzione geografica
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Continente #
NA - Nord America 11.974
AS - Asia 1.301
EU - Europa 1.265
AF - Africa 3
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 14.548
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Nazione #
US - Stati Uniti d'America 11.962
CN - Cina 657
SG - Singapore 520
IT - Italia 312
FI - Finlandia 285
DE - Germania 156
UA - Ucraina 139
SE - Svezia 109
FR - Francia 102
GB - Regno Unito 76
VN - Vietnam 60
IN - India 38
IE - Irlanda 27
RU - Federazione Russa 18
HK - Hong Kong 11
CA - Canada 10
AT - Austria 9
NL - Olanda 7
CH - Svizzera 6
JP - Giappone 6
BE - Belgio 5
KR - Corea 5
AU - Australia 3
ES - Italia 3
GR - Grecia 3
LU - Lussemburgo 3
BY - Bielorussia 2
MX - Messico 2
PL - Polonia 2
TW - Taiwan 2
BG - Bulgaria 1
BR - Brasile 1
EU - Europa 1
IL - Israele 1
IR - Iran 1
NG - Nigeria 1
TN - Tunisia 1
ZA - Sudafrica 1
Totale 14.548
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Città #
Fairfield 2.178
Woodbridge 1.348
Houston 1.082
Ashburn 888
Seattle 816
Ann Arbor 788
Cambridge 747
Wilmington 745
Jacksonville 681
Chandler 490
Singapore 434
Boardman 287
Princeton 286
Santa Clara 268
San Diego 235
Beijing 170
Helsinki 117
Nanjing 110
Padova 109
Medford 98
Des Moines 77
Guangzhou 72
Dong Ket 60
Shenyang 42
Roxbury 32
Hebei 31
Nanchang 29
Dublin 26
London 25
Jiaxing 24
New York 24
Milan 23
Norwalk 23
Tianjin 23
Changsha 16
Shanghai 14
Indiana 13
Pune 13
Hong Kong 11
Nuremberg 11
Frankfurt am Main 10
Dallas 9
Jinan 9
Ogden 9
Brendola 8
Kilburn 8
Ravenna 8
Redwood City 8
Rome 8
Borås 7
Kharkiv 7
Mestre 7
Munich 7
Venice 7
Ningbo 6
Washington 6
Bologna 5
Brussels 5
Chiswick 5
Ferrara 5
Hounslow 5
Lappeenranta 5
San Francisco 5
Tappahannock 5
Cassino 4
Como 4
Hefei 4
Los Angeles 4
Siena 4
Taizhou 4
Cesena 3
Chicago 3
Chieti 3
Falls Church 3
Luxembourg 3
Malnate 3
New Bedfont 3
Paris 3
Phoenix 3
Portoferraio 3
Tokyo 3
Toronto 3
Xi'an 3
Zhengzhou 3
Castenaso 2
Catania 2
Chungcheongnam-do 2
Edinburgh 2
Fuzhou 2
Geneva 2
Hangzhou 2
Las Vegas 2
L’Aquila 2
Mexico City 2
Naples 2
Noicattaro 2
Piazzola sul Brenta 2
Pisa 2
Prescot 2
Puegnago sul Garda 2
Totale 12.728
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Nome #
B clustering in amorphous Si 140
Strong deviation of the lattice parameter in Si1-x-yGexCy epilayers from Vegard's rule 127
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 127
Fabrication of "nano-rocket-tips" for plasmonic nanofocusing 125
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 116
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures 115
Dissolution kinetics of B clusters in crystalline Si 114
Mechanism of B diffusion in crystalline Ge under proton irradiation 114
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing 114
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide 112
Integrated architecture for the electrical detection of plasmonic resonances based on high electron mobility photo-transistors 112
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 112
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 112
Boron diffusion in extrinsically doped crystalline silicon 109
Optimal crystal surface for efficient channeling in the new generation of hadron machines 109
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 106
Formation and dissolution of D-N complexes in dilute nitrides 106
Radiation enhanced diffusion of B in crystalline Ge 105
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 105
Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers 104
Crack formation in tensile InGaAS/InP layers 103
Iso-concentration study of atomistic mechanism of B diffusion in Si 102
Self-limiting Sb monolayer as a diffusion source for Ge doping 102
Detailed arsenic concentration profiles at Si/SiO2 interfaces 101
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 101
Atomistic Mechanism of Boron Diffusion in Silicon 100
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 98
Instrumentation for measurement of in-flight annihilations of 130 keV antiprotons on thin target foils 98
Effect of strain on the carrier mobility in heavily doped p-type Si 98
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy 97
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 96
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection 96
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial regrowth of amorphous Si 96
Backscattering/transmission of 2MeV He++ ions quantitative correlation study 96
High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal 95
New developments in hpge detectors for high resolution detection 95
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 94
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 94
Role of self-interstitials on B diffusion in Ge 94
N-type doping of Ge by As implantation and excimer laser annealing 94
Classical versus ab initio structural relaxation: electronic excitations and optical properties of Ge nanocrystals embedded in an SiC matrix 94
Patterned nanoporous-gold thin layers: structure control and tailoring of plasmonic properties 94
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 93
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 92
Extended Point Defects in Crystalline Materials: Ge and Si 92
Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams 92
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 92
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 91
A topologically connected multistrip crystal for efficient steering of high-energy beam 91
Coherent Effects of High-Energy Particles in a Graded Si1-xGex Crystal 91
Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction 91
Nitrogen-induced hindering of In incorporation in InGaAsN 91
The experimental setup of the Interaction in Crystals for Emission of RADiation collaboration at Mainzer Mikrotron: Design, commissioning, and tests 90
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 89
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications 89
Iron site location in Fe-diffused lithium niobate crystals by combined RBS-PIXE-NRA analysis 88
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 88
Oxygen behavior in germanium during melting laser thermal annealing 88
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 88
Advanced Diffusion Strategies for Junction Formation in Germanium 88
Diffusion doping of germanium by sputtered antimony sources 87
Enhancement of the Inelastic Nuclear Interaction Rate in Crystals via Antichanneling 86
Substitutional B in Si: Accurate lattice parameter determination 86
Mechanism of boron diffusion in amorphous silicon 85
On the radiation accompanying volume reflection 85
Impurity and defect interactions during laser thermal annealing in Ge 85
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 85
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy 85
Local structure of nitrogen-hydrogen complexes in dilute nitrides 84
Optimal process parameters for phosphorus spin-on-doping of germanium 84
Evidence for a new hydrogen complex in dilute nitride alloys 83
Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure 83
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 82
Lattice parameter in Si1-yCy epilayers: deviation from Vegard's rule 82
Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality 82
Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy 82
Dissolution kinetics of boron-interstitial clusters in silicon 81
Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si 81
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 81
First results on the SPS beam collimation with bent crystals 80
Silicon interstitial injection during dry oxidation of SiGe/Si layers 80
Composition control of GaSbAs alloys 80
Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer 80
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 80
Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy 80
Experimental evidence of planar channeling in a periodically bent crystal 80
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures 80
First measurement of the antiproton-nucleus annihilation cross section at 125 keV 80
Investigation of the Electromagnetic Radiation Emitted by Sub-GeV Electrons in a Bent Crystal 80
Observation of parametric X-rays produced by 400 GeV/c protons in bent crystals 80
Apparatus to study crystal channeling and volume reflection phenomena at the SPSH8 beamline 79
Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals 79
Local structure in semiconductor superlattices and epilayers 78
Metastability of Si1-yCy epilayers under 2 MeV alpha particle irradiation 78
Mechanisms of boron diffusion in silicon and germanium 78
Fabrication of large area silicon nanothickness membranes for channeling experiments 78
Characterization and modeling of thermally-induced doping contaminants in high-purity germanium 78
Lattice strain induced by boron clusters in crystalline silicon 78
Strain effect on interatomic distances in InGaAs/InP epitaxial layers 77
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System 77
Totale 9.295
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Categoria #
all - tutte 61.442
article - articoli 54.781
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 119
patent - brevetti 0
selected - selezionate 0
volume - volumi 143
Totale 116.485
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.689 0 0 0 0 0 0 326 389 340 310 194 130
2020/20212.374 80 152 53 159 216 350 65 174 472 186 305 162
2021/20222.497 117 244 428 191 97 125 135 293 116 54 306 391
2022/20231.291 313 41 16 115 253 182 8 104 153 15 74 17
2023/2024839 30 159 69 65 41 70 46 33 32 62 126 106
2024/20251.302 23 338 151 129 516 129 16 0 0 0 0 0
Totale 14.719