Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is also a brief description of the major interaction mechanisms between ionizing particles and electronic devices.
Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects / Gasperin, Alberto. - (2008).
Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects
Gasperin, Alberto
2008
Abstract
Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is also a brief description of the major interaction mechanisms between ionizing particles and electronic devices.File in questo prodotto:
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A_Gasperin_PhDThesis.pdf
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