Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a non monochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the non-ionizing energy deposited in the device substrate.
Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs
Collazuol G.Investigation
;
2019
Abstract
Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a non monochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the non-ionizing energy deposited in the device substrate.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
