RadFET dose response in the CHARM mixed-field: FLUKA MC simulations

This paper focuses on Monte Carlo simulations aiming at calculating the dose response of the Rad- FET dosimeter, when exposed to the complex CHARM mixed-fields, at CERN. We study how the dose deposited in the Gate Oxide (SiO2) of the RadFET is a-ected by the energy threshold variation in the Monte Carlo simulations as well as the materials and sizes of scoring volumes. Also the characteristics of the input spectra will be taken into account and their impact on the final simulated dose will be studied. Dose variation as a function of the position of the RadFET in the test facility will be then examined and comparisons with experimental results will be shown. The contribution to the total dose due to every single particles of the mixed-field, under di-erent target-shielding configurations, will be finally presented, aiming at a complete characterization of the RadFETs dose response in the CHARM mixed-fields.