Improvements in semiconductor technology and downscaling have required continuous efforts of the scientific community to solve new challenges in the doping of semiconductor materials. Semiconductor devices, as well as their doping needs, are now undergoing profound change, from the introduction of 3D na- nostructured CMOS architectures to new materials and processes for exciting applications in nanoelectronics, quantum technology, optoelectronics, plasmonics, etc. This special issue, under the valuable and inspiring guidance of Giuliana Impellizzeri, Editor, focuses on the recent progress in the area of doping methodologies for different advanced applications in semiconductor technology. It is composed of fifteen invited review papers and four regular original papers. The review papers address doping strategies for advanced finFET and nanowire FET devices (A. Veloso), applications of ion implantation in advanced silicon devices (M.I. Current), deterministic doping methods for applications in quantum technology (D.N. Jamieson), doping characterization in 3D structures (W. Vandervorst), modeling of doping processes (in reviews by N. Zographos, L. Pelaz and S.F. Lombardo), doping by pulsed laser melting (in reviews by K. Huet and W. Yang) and flash lamp annealing (S. Prucnal), molecular monolayers for conformal doping (L. Ye), doping of nanostructures (in reviews by S.A. Dayeh and E. Arduca), and doping of III–V semiconductors (in reviews by H. Aldridge and P. Pampili). We would like to gratefully acknowledge all the contributing authors for sharing their valuable knowledge and expertise, as well as reviewers for their insightful comments and suggestions: all have contributed to the success of this special issue. We hope the papers presented here provide a representative overview of the current progress in semiconductor doping across most classes of semiconductors that are driving advanced applications and will stimulate new exciting research in this field, thus enabling even further progress in semiconductor technology
Preface to Special Issue: Advanced doping methods in semiconductor devices and nanostructures
Napolitani, Enrico;
2017
Abstract
Improvements in semiconductor technology and downscaling have required continuous efforts of the scientific community to solve new challenges in the doping of semiconductor materials. Semiconductor devices, as well as their doping needs, are now undergoing profound change, from the introduction of 3D na- nostructured CMOS architectures to new materials and processes for exciting applications in nanoelectronics, quantum technology, optoelectronics, plasmonics, etc. This special issue, under the valuable and inspiring guidance of Giuliana Impellizzeri, Editor, focuses on the recent progress in the area of doping methodologies for different advanced applications in semiconductor technology. It is composed of fifteen invited review papers and four regular original papers. The review papers address doping strategies for advanced finFET and nanowire FET devices (A. Veloso), applications of ion implantation in advanced silicon devices (M.I. Current), deterministic doping methods for applications in quantum technology (D.N. Jamieson), doping characterization in 3D structures (W. Vandervorst), modeling of doping processes (in reviews by N. Zographos, L. Pelaz and S.F. Lombardo), doping by pulsed laser melting (in reviews by K. Huet and W. Yang) and flash lamp annealing (S. Prucnal), molecular monolayers for conformal doping (L. Ye), doping of nanostructures (in reviews by S.A. Dayeh and E. Arduca), and doping of III–V semiconductors (in reviews by H. Aldridge and P. Pampili). We would like to gratefully acknowledge all the contributing authors for sharing their valuable knowledge and expertise, as well as reviewers for their insightful comments and suggestions: all have contributed to the success of this special issue. We hope the papers presented here provide a representative overview of the current progress in semiconductor doping across most classes of semiconductors that are driving advanced applications and will stimulate new exciting research in this field, thus enabling even further progress in semiconductor technology
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