Comparison Between Uniform and CHC Stress on III-V MOSFETs

We showed the different effects of uniform gate stress and CHC stress. CHC induced strong subthreshold swing degradation and a negligible transconductance variation. On the contrary, the uniform gate stress induced a smaller subthreshold swing variation, but a considerably larger gm variation. This different behavior is due to the different location of the stress damage. CHC strongly affects the region near the source which marginally plays a role in the channel conduction in the linear region, whereas the uniform stress affects the whole channel area.