We showed the different effects of uniform gate stress and CHC stress. CHC induced strong subthreshold swing degradation and a negligible transconductance variation. On the contrary, the uniform gate stress induced a smaller subthreshold swing variation, but a considerably larger gm variation. This different behavior is due to the different location of the stress damage. CHC strongly affects the region near the source which marginally plays a role in the channel conduction in the linear region, whereas the uniform stress affects the whole channel area.

Comparison Between Uniform and CHC Stress on III-V MOSFETs

WRACHIEN, NICOLA;CESTER, ANDREA;BARI, DANIELE;MENEGHESSO, GAUDENZIO;
2012

Abstract

We showed the different effects of uniform gate stress and CHC stress. CHC induced strong subthreshold swing degradation and a negligible transconductance variation. On the contrary, the uniform gate stress induced a smaller subthreshold swing variation, but a considerably larger gm variation. This different behavior is due to the different location of the stress damage. CHC strongly affects the region near the source which marginally plays a role in the channel conduction in the linear region, whereas the uniform stress affects the whole channel area.
2012
21st European Workshop on Heterostructure Technology - HETECH 2012
21st European Workshop on Heterostructure Technology - HETECH 2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2531841
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