This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology.

Tests of monolithic pixel detectors in SOI technology with depleted substrate

GIUBILATO, PIERO;BISELLO, DARIO;MATTIAZZO, SERENA;PANTANO, DEVIS;POZZOBON, NICOLA;
2011

Abstract

This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2531272
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