In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM
MATTIAZZO, SERENA;BISELLO, DARIO;GIUBILATO, PIERO;PANTANO, DEVIS;SILVESTRIN, LUCA;
2011
Abstract
In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
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