The turn-on speed of nMOS transistors (nMOST) is of paramount importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a commercial e-beam tester. The method may be used to improve CDM-ESD hardness by investigating the CDM pulse responses within circuit. It is also shown that the measured transient behaviour could be described accurately using SPICE simulations
Measurements of the turn-on time in grounded-gate nMOS transistors under fast rise time stress pulses
MENEGHESSO, GAUDENZIO;
1997
Abstract
The turn-on speed of nMOS transistors (nMOST) is of paramount importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a commercial e-beam tester. The method may be used to improve CDM-ESD hardness by investigating the CDM pulse responses within circuit. It is also shown that the measured transient behaviour could be described accurately using SPICE simulations
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