Ion implantation in silica is a useful way to generate unusual properties in glasses. To use ion implantation as a synthesis technique, it is necessary to understand the dynamics of the process. Silica glass samples, implanted with Mn at 38 keV energy and fluences of 1 x 10(16), 5 x 10(16) and 10 x 10(16) ions cm(-2) were investigated mainly by X-ray photoelectron (XPS), X-ray-excited Auger electron (XE-AES) and UV-photoelectron (UPS) spectroscopies. Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) measurements, optical absorption and electron paramagnetic resonance (EPR) investigations were also performed. Mn silicate is present in all samples, while in the 5 x 10(16) and 10 x 10(16) samples Mn silicide compounds form in the most damaged region. These findings give further support to the two-step model as a simple method to predict the final compounds resulting from ion irradiation of a solid matrix.
Composite materials obtained by ion irradiation: Mn implantation in silica glass
BERTONCELLO, RENZO;MAZZOLDI, PAOLO;RUZZI, MARCO;
1999
Abstract
Ion implantation in silica is a useful way to generate unusual properties in glasses. To use ion implantation as a synthesis technique, it is necessary to understand the dynamics of the process. Silica glass samples, implanted with Mn at 38 keV energy and fluences of 1 x 10(16), 5 x 10(16) and 10 x 10(16) ions cm(-2) were investigated mainly by X-ray photoelectron (XPS), X-ray-excited Auger electron (XE-AES) and UV-photoelectron (UPS) spectroscopies. Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) measurements, optical absorption and electron paramagnetic resonance (EPR) investigations were also performed. Mn silicate is present in all samples, while in the 5 x 10(16) and 10 x 10(16) samples Mn silicide compounds form in the most damaged region. These findings give further support to the two-step model as a simple method to predict the final compounds resulting from ion irradiation of a solid matrix.Pubblicazioni consigliate
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