We studied the reliability of Organic Light-Emitting Diodes (OLEDs) featuring a NPD hole transport layer and Alq3 electron transport layer, subjected to thermal and electrical stress. The main results can be summarized as follows: temperature alone (without bias) cannot induce device degradation at least up to 60 C; during constant current stress at 120 mA/cm2, temperature can strongly enhance the degradation rate, even though the temperature increases only by 40 C; the degradation is more severe in the central part of the device where the self-heating is larger.

Thermal and electrical stress effects of electrical and optical characteristics of Alq(3)/NPD OLED

CESTER, ANDREA;BARI, DANIELE;WRACHIEN, NICOLA;MENEGHESSO, GAUDENZIO;
2010

Abstract

We studied the reliability of Organic Light-Emitting Diodes (OLEDs) featuring a NPD hole transport layer and Alq3 electron transport layer, subjected to thermal and electrical stress. The main results can be summarized as follows: temperature alone (without bias) cannot induce device degradation at least up to 60 C; during constant current stress at 120 mA/cm2, temperature can strongly enhance the degradation rate, even though the temperature increases only by 40 C; the degradation is more severe in the central part of the device where the self-heating is larger.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2469780
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