Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage.
Design of broadband inductorless LNAs in ultra-scaled CMOS technologies
BEVILACQUA, ANDREA;CAMPONESCHI, MATTEO;GEROSA, ANDREA;NEVIANI, ANDREA
2008
Abstract
Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage.
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