This work presents a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaS heterojunction bipolar transistors (HBT). Electrons heated by the strong electric field at the base-collector junction lead to both impact ionization and light emission. A new, general-purpose, weighted Monte Carlo procedure has been developed to study these effects. The measured hot electroluminescence is attributed to radiative recombinations within the valence and the conduction bands. Good agreement is found between theory and experiment.
A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
NEVIANI, ANDREA;ZANONI, ENRICO;
1998
Abstract
This work presents a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaS heterojunction bipolar transistors (HBT). Electrons heated by the strong electric field at the base-collector junction lead to both impact ionization and light emission. A new, general-purpose, weighted Monte Carlo procedure has been developed to study these effects. The measured hot electroluminescence is attributed to radiative recombinations within the valence and the conduction bands. Good agreement is found between theory and experiment.
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