MASTROMATTEO, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 2.368
AS - Asia 1.301
EU - Europa 423
SA - Sud America 212
AF - Africa 163
Continente sconosciuto - Info sul continente non disponibili 24
OC - Oceania 23
Totale 4.514
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Nazione #
US - Stati Uniti d'America 2.269
SG - Singapore 413
CN - Cina 343
BR - Brasile 137
HK - Hong Kong 132
VN - Vietnam 102
IT - Italia 76
BD - Bangladesh 41
FI - Finlandia 41
IN - India 38
FR - Francia 36
DE - Germania 26
UA - Ucraina 22
GB - Regno Unito 20
RU - Federazione Russa 20
IQ - Iraq 19
SE - Svezia 19
KR - Corea 17
TR - Turchia 17
PL - Polonia 15
AR - Argentina 14
IE - Irlanda 13
ZA - Sudafrica 13
EC - Ecuador 11
MA - Marocco 11
SA - Arabia Saudita 11
CH - Svizzera 10
JP - Giappone 10
MX - Messico 10
PH - Filippine 10
PK - Pakistan 10
TW - Taiwan 10
AZ - Azerbaigian 9
BO - Bolivia 9
BW - Botswana 9
DO - Repubblica Dominicana 9
JO - Giordania 9
MY - Malesia 9
NL - Olanda 9
VE - Venezuela 9
AU - Australia 8
BE - Belgio 8
CA - Canada 8
CO - Colombia 8
ET - Etiopia 8
IL - Israele 8
JM - Giamaica 8
KH - Cambogia 8
UZ - Uzbekistan 8
AL - Albania 7
LB - Libano 7
LC - Santa Lucia 7
LY - Libia 7
MK - Macedonia 7
NZ - Nuova Zelanda 7
PS - Palestinian Territory 7
BG - Bulgaria 6
CL - Cile 6
HT - Haiti 6
IS - Islanda 6
MG - Madagascar 6
NE - Niger 6
PA - Panama 6
PE - Perù 6
PY - Paraguay 6
TH - Thailandia 6
TN - Tunisia 6
AE - Emirati Arabi Uniti 5
AT - Austria 5
BB - Barbados 5
BJ - Benin 5
BY - Bielorussia 5
CR - Costa Rica 5
DK - Danimarca 5
EG - Egitto 5
ES - Italia 5
GA - Gabon 5
GE - Georgia 5
GP - Guadalupe 5
GR - Grecia 5
HN - Honduras 5
ID - Indonesia 5
KZ - Kazakistan 5
MD - Moldavia 5
MN - Mongolia 5
NO - Norvegia 5
NP - Nepal 5
RS - Serbia 5
AD - Andorra 4
BS - Bahamas 4
CM - Camerun 4
CU - Cuba 4
CV - Capo Verde 4
CW - ???statistics.table.value.countryCode.CW??? 4
CY - Cipro 4
GF - Guiana Francese 4
HU - Ungheria 4
LU - Lussemburgo 4
LV - Lettonia 4
ML - Mali 4
Totale 4.348
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Città #
Ashburn 355
Fairfield 302
Singapore 268
San Jose 203
Woodbridge 175
Houston 141
Hong Kong 123
Seattle 109
Wilmington 102
Cambridge 98
Chandler 97
Ann Arbor 89
Beijing 72
Jacksonville 52
Santa Clara 43
Ho Chi Minh City 42
San Diego 36
Los Angeles 35
Boardman 32
Princeton 30
Hanoi 22
Padova 19
Lauterbourg 18
New York 16
Des Moines 14
Medford 14
Nanjing 14
Guangzhou 12
Helsinki 12
Baghdad 11
Dublin 10
Johannesburg 10
São Paulo 10
Baku 9
Shanghai 9
Amman 8
Buffalo 8
Chicago 8
London 8
Orem 8
Cagliari 7
Council Bluffs 7
Kingston 7
Phnom Penh 7
Rome 7
Warsaw 7
Belo Horizonte 6
Castries 6
Da Nang 6
Milan 6
Taipei 6
Tashkent 6
Addis Ababa 5
Antananarivo 5
Auckland 5
Bridgetown 5
Bytom 5
Casablanca 5
Cotonou 5
Gaborone 5
Haiphong 5
Kuala Lumpur 5
Libreville 5
Lima 5
Manchester 5
Munich 5
Niamey 5
Panama City 5
Santo Domingo 5
Shenyang 5
Stockholm 5
Tbilisi 5
Tel Aviv 5
Tokyo 5
Tripoli 5
Turku 5
Ulan Bator 5
Andorra la Vella 4
Antakya 4
Bamako 4
Dallas 4
Dar es Salaam 4
Guayaquil 4
Harare 4
Havana 4
Hebei 4
Indiana 4
Istanbul 4
La Paz 4
Maitengwe 4
Maputo 4
Medellín 4
Minsk 4
Muscat 4
Ninh Bình 4
Norwalk 4
Nouakchott 4
Oslo 4
Port-au-Prince 4
Pristina 4
Totale 2.939
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Nome #
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 258
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 255
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications 240
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 233
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 225
Mechanism of B diffusion in crystalline Ge under proton irradiation 223
Oxygen behavior in germanium during melting laser thermal annealing 222
Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si 211
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 207
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals 204
Mechanism of fluorine redistribution and incorporation during solid phase epitaxial regrowth of pre-amorphized silicon 204
Radiation enhanced diffusion of B in crystalline Ge 201
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial regrowth of amorphous Si 201
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 200
Role of self-interstitials on B diffusion in Ge 195
N-type doping of Ge by As implantation and excimer laser annealing 188
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 184
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy 184
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 181
Role of ion mass on damage accumulation during ion implantation in Ge 173
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 168
Recent Insights in the Diffusion of Boron in Silicon and Germanium 157
Totale 4.514
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Categoria #
all - tutte 13.702
article - articoli 11.313
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.015
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022301 0 23 72 18 7 24 16 32 15 8 39 47
2022/2023224 34 7 4 20 48 29 1 24 38 4 12 3
2023/202488 5 15 9 9 6 4 3 6 2 3 17 9
2024/2025563 4 72 19 26 52 32 22 28 55 21 120 112
2025/20262.160 89 151 274 350 265 94 248 180 219 198 65 27
2026/202747 40 7 0 0 0 0 0 0 0 0 0 0
Totale 4.514