DI RUSSO, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 2.019
AS - Asia 1.779
EU - Europa 866
SA - Sud America 335
AF - Africa 326
Continente sconosciuto - Info sul continente non disponibili 109
OC - Oceania 31
Totale 5.465
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Nazione #
US - Stati Uniti d'America 1.809
SG - Singapore 666
IT - Italia 278
CN - Cina 268
BR - Brasile 208
VN - Vietnam 208
HK - Hong Kong 177
BD - Bangladesh 82
FR - Francia 62
DE - Germania 55
PL - Polonia 52
CA - Canada 46
IN - India 44
GB - Regno Unito 42
NL - Olanda 31
ES - Italia 27
TR - Turchia 27
ZA - Sudafrica 27
AR - Argentina 26
EC - Ecuador 26
JM - Giamaica 25
RU - Federazione Russa 25
PH - Filippine 22
IQ - Iraq 21
FI - Finlandia 20
JP - Giappone 19
UZ - Uzbekistan 19
CO - Colombia 17
ID - Indonesia 17
IE - Irlanda 17
MX - Messico 17
UA - Ucraina 17
GT - Guatemala 16
NE - Niger 14
SA - Arabia Saudita 14
VE - Venezuela 14
AT - Austria 13
CV - Capo Verde 13
KR - Corea 13
MA - Marocco 13
PK - Pakistan 13
SE - Svezia 13
BF - Burkina Faso 12
BY - Bielorussia 12
DZ - Algeria 12
PY - Paraguay 12
SN - Senegal 12
AO - Angola 11
BJ - Benin 11
CZ - Repubblica Ceca 11
ET - Etiopia 11
PS - Palestinian Territory 11
SK - Slovacchia (Repubblica Slovacca) 11
ZW - Zimbabwe 11
AL - Albania 10
AM - Armenia 10
AU - Australia 10
CL - Cile 10
EE - Estonia 10
GM - Gambi 10
HR - Croazia 10
KH - Cambogia 10
LU - Lussemburgo 10
PA - Panama 10
PT - Portogallo 10
SI - Slovenia 10
AE - Emirati Arabi Uniti 9
CI - Costa d'Avorio 9
CR - Costa Rica 9
CY - Cipro 9
DK - Danimarca 9
DO - Repubblica Dominicana 9
HU - Ungheria 9
LB - Libano 9
MD - Moldavia 9
NO - Norvegia 9
PR - Porto Rico 9
RS - Serbia 9
TJ - Tagikistan 9
AF - Afghanistan, Repubblica islamica di 8
AZ - Azerbaigian 8
BA - Bosnia-Erzegovina 8
CH - Svizzera 8
CW - ???statistics.table.value.countryCode.CW??? 8
GR - Grecia 8
ML - Mali 8
MR - Mauritania 8
MU - Mauritius 8
NI - Nicaragua 8
NP - Nepal 8
YT - Mayotte 8
BB - Barbados 7
BE - Belgio 7
CD - Congo 7
CG - Congo 7
DJ - Gibuti 7
GN - Guinea 7
HN - Honduras 7
IR - Iran 7
JO - Giordania 7
Totale 5.066
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Città #
Singapore 445
Ashburn 357
San Jose 304
Hong Kong 160
Santa Clara 138
Council Bluffs 75
Chicago 67
Ho Chi Minh City 66
Los Angeles 60
Beijing 57
Hanoi 51
Padova 47
Bytom 39
Padua 35
Boardman 34
Buffalo 32
New York 31
Lauterbourg 30
Salt Lake City 25
Hefei 24
Milan 24
Munich 19
Tashkent 18
Denver 16
Kingston 16
Tampa 16
Brooklyn 15
Niamey 13
Phoenix 13
Dakar 12
Dallas 12
Praia 12
São Paulo 12
Da Nang 11
Harare 11
London 11
Rome 11
Tokyo 11
Haiphong 10
Montreal 10
Orem 10
Ouagadougou 10
Quito 10
The Dalles 10
Arce 9
Brasília 9
Cotonou 9
Johannesburg 9
Nuremberg 9
Phnom Penh 9
Vienna 9
Abidjan 8
Addis Ababa 8
Baghdad 8
Baku 8
Dushanbe 8
Elk Grove Village 8
Frankfurt am Main 8
Guatemala City 8
Las Vegas 8
Ljubljana 8
Luanda 8
Managua 8
Minsk 8
Nouakchott 8
Panama City 8
Poplar 8
Ravenna 8
Turku 8
Warsaw 8
Xi'an 8
Atlanta 7
Bamako 7
Bishkek 7
Bogotá 7
Brendola 7
Chisinau 7
Guangzhou 7
Helsinki 7
Montevideo 7
San Francisco 7
Santo Domingo 7
Tallinn 7
Willemstad 7
Yerevan 7
Amsterdam 6
Belgrade 6
Boston 6
Brazzaville 6
Bridgetown 6
Budapest 6
Castries 6
Cesena 6
Chennai 6
Dublin 6
Havana 6
Jersey City 6
Lancaster 6
Libreville 6
Lusaka 6
Totale 2.801
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Nome #
Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting 333
The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures 316
Laser induced crystallization of sputtered MoS2 thin films 249
PULSED LASER MELTING FOR TOPCON TECHNOLOGY: NEW ROUTES TO HIGHER EFFICIENCY 238
Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing 214
Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting 198
Polarization-resolved photoluminescence study of an atom probe tip containing a ZnO-(Mg,Zn)O heterostructure 183
Pulsed laser crystallization of sol-gel derived cerium oxide thin films 180
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 179
Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe 163
Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation down to the Nanoscale 159
InGaN quantum dots studied by correlative microscopy techniques for enhanced light-emitting diodes 158
In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters 157
Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys 149
Order and disorder at the atomic scale: Microscopy applied to semiconductors 135
Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography 132
Correlative atom probe tomography and optical spectroscopy: An original gateway to materials science and nanoscale physics 132
Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature 131
Behavior of the Ga2O3:Sn Evaporation during Laser-Assisted Atom Probe Tomography 128
Detecting Dissociation Dynamics of Phosphorus Molecular Ions by Atom Probe Tomography 127
Hyperdoping of Ge/Si and SiGe/Si epitaxial layers by UV-nanosecond laser processing 124
Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors 123
A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy 119
Field-Dependent Measurement of GaAs Composition by Atom Probe Tomography 116
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction 114
Dissociation of GaN2+ and AlN2+ in APT: Analysis of experimental measurements 109
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography 108
Compositional accuracy of atom probe tomography measurements in GaN: Impact of experimental parameters and multiple evaporation events 106
Thermal stability of hyper-doped n-type Ge and Si0.15Ge0.85 epilayers obtained by in situ doping and pulsed laser melting 106
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes 103
Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers 103
Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography 99
Three-dimensional atomic-scale investigation of ZnO-MgxZn1-xO m-plane heterostructures 98
Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy 95
Optical shaping of a nano-scale tip by femtosecond laser assisted field evaporation 91
Segregation scheme of indium in AlGaInAs nanowire shells 90
Rapid, versatile, and reliable metrology for multi-layer transition metal dichalcogenide thin films using atomic force microscopy to investigate surface grain distributions 61
Laser‐Enabled Nanopinholes for Silicon Solar Cells with Polycrystalline Si/SiOx Passivating Contacts 19
Compositional metrology of atom probe applied to non-metallic materials 13
Pulsed Laser Melting for TOPCon technology: new routes to higher efficiency 7
Totale 5.465
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Categoria #
all - tutte 17.844
article - articoli 17.469
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.313
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202375 0 2 0 0 3 6 0 42 9 4 6 3
2023/2024202 8 45 17 16 5 5 25 10 22 15 19 15
2024/2025956 18 129 26 29 128 16 97 76 38 38 125 236
2025/20263.700 228 164 555 584 505 177 375 304 298 254 105 151
2026/2027532 113 179 185 55 0 0 0 0 0 0 0 0
Totale 5.465