LA GRASSA, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 724
AS - Asia 155
EU - Europa 112
Totale 991
Nazione #
US - Stati Uniti d'America 724
SG - Singapore 57
IT - Italia 47
CN - Cina 45
VN - Vietnam 32
FI - Finlandia 22
FR - Francia 9
HK - Hong Kong 9
RU - Federazione Russa 8
DE - Germania 7
GB - Regno Unito 7
IN - India 5
CH - Svizzera 3
IE - Irlanda 3
SA - Arabia Saudita 3
UA - Ucraina 3
NL - Olanda 2
BD - Bangladesh 1
SE - Svezia 1
TH - Thailandia 1
TR - Turchia 1
TW - Taiwan 1
Totale 991
Città #
Woodbridge 117
Fairfield 107
Houston 81
Chandler 57
Ann Arbor 44
Seattle 42
Ashburn 33
Dong Ket 32
Cambridge 30
Singapore 30
Santa Clara 28
Wilmington 28
Boardman 17
Beijing 14
Medford 13
Princeton 13
Padova 11
Helsinki 10
San Diego 10
Des Moines 9
Hong Kong 9
Cagliari 6
Council Bluffs 4
Cham 3
Dublin 3
Guangzhou 3
Nanjing 3
Tianjin 3
Appleton 2
Columbus 2
Dallas 2
Indiana 2
Nuremberg 2
Pune 2
Shanghai 2
Shenyang 2
Suzhou 2
Thuwal 2
Afragola 1
Bangkok 1
Caldiero 1
Chiswick 1
Dhaka 1
Elspeet 1
Gif-sur-yvette 1
Groningen 1
Hebei 1
Hounslow 1
Hsinchu 1
Jiaxing 1
Kharkiv 1
London 1
Milpitas 1
Nanchang 1
New York 1
Riyadh 1
Stockholm 1
Venice 1
Yenibosna 1
Totale 801
Nome #
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 134
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 124
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 110
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes 88
Degradation of InGaN-based LEDs related to charge diffusion and build-up 81
Thermal droop in InGaN-based LEDs: Physical origin and dependence on material properties 78
Role of defects in the thermal droop of InGaN-based light emitting diodes 78
Non radiative losses and degradation in InGaN-based LEDs 64
Defect-Related Processes and their Influence on the Efficiency and Degradation of InGaN-Based Leds 62
SRH non-radiative recombination in GaN-based LEDs: a study based on lifetime and DLTS measurements 59
Thermal droop in InGaN-based LEDs: an analysis based on temperature-dependent L-I characterization 54
Investigation of the thermal droop in InGaN-layers and blue LEDs 37
Analysis of the deep levels related to non-radiative recombination in GaN-on-Si LEDs: a study based on deep level transient spectroscopy 34
Totale 1.003
Categoria #
all - tutte 4.126
article - articoli 1.572
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.698


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202054 0 0 0 0 0 0 0 0 0 41 10 3
2020/202191 2 12 0 7 4 3 2 7 7 8 6 33
2021/2022144 15 26 6 9 2 6 11 9 4 7 6 43
2022/2023120 22 5 0 16 26 15 0 9 16 0 9 2
2023/202470 2 6 6 10 4 2 0 13 4 6 7 10
2024/2025146 0 16 10 15 29 26 17 27 6 0 0 0
Totale 1.003