BERTIN, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 746
AS - Asia 119
EU - Europa 96
Continente sconosciuto - Info sul continente non disponibili 1
Totale 962
Nazione #
US - Stati Uniti d'America 745
CN - Cina 54
SG - Singapore 40
IT - Italia 27
DE - Germania 22
FI - Finlandia 15
VN - Vietnam 15
FR - Francia 9
SE - Svezia 9
IN - India 8
GB - Regno Unito 4
IE - Irlanda 4
UA - Ucraina 4
AT - Austria 1
CA - Canada 1
EU - Europa 1
IL - Israele 1
NL - Olanda 1
TW - Taiwan 1
Totale 962
Città #
Woodbridge 149
Fairfield 93
Ann Arbor 70
Ashburn 60
Houston 47
Wilmington 46
Chandler 37
Cambridge 34
Santa Clara 34
Seattle 32
Singapore 31
Beijing 18
Boardman 15
Dong Ket 15
Munich 14
Nanjing 12
San Diego 12
Medford 11
Princeton 11
Des Moines 10
Modena 6
Jacksonville 5
Bengaluru 4
Dublin 4
Helsinki 4
Padova 4
Redwood City 4
Parma 3
San Francisco 3
Shenyang 3
Bovolenta 2
Farra di Soligo 2
Hebei 2
Indiana 2
Jiaxing 2
Jinan 2
Washington 2
Cedar Park 1
Changsha 1
Dalsjoefors 1
Falls Church 1
Groningen 1
Hsinchu 1
Kharkiv 1
Kilburn 1
London 1
Mouvaux 1
Mumbai 1
Nanchang 1
Nürnberg 1
Shanghai 1
Shoham 1
Tianjin 1
Vienna 1
Totale 822
Nome #
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 174
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 147
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 118
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 101
OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown 74
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 71
Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis 65
Time dependent Degradation of AlGaN/GaN HEMTs 55
Study of Time-Dependent Degradation of Reverse Biased AlGaN/GaN HEMTs 55
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 52
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 50
Totale 962
Categoria #
all - tutte 3.330
article - articoli 1.597
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.927


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020105 0 0 0 0 0 9 11 17 21 19 23 5
2020/2021137 5 11 1 11 23 12 8 8 16 4 16 22
2021/2022115 1 12 14 17 5 8 1 18 6 0 5 28
2022/202395 14 1 1 8 17 17 0 14 18 1 3 1
2023/202439 2 12 3 1 1 2 1 0 3 2 4 8
2024/2025111 0 23 13 15 38 22 0 0 0 0 0 0
Totale 962