Silicon Carbide (SiC) has been recently proposed and patented as a material for the realization of radiation dosimetry detectors. SiC properties, including its high sensitivity, radiation damage resistance and its extremely small sensitivity region, make it an amazing device susceptible to radiation dosimetric applications of direct ionizing radiations. In this work, a dosimetric characterization of a 10 μm thick SiC detector, irradiated with 62 MeV monochromatic and clinical SOBP proton beams, is reported. Short term reproducibility and linearity with the absorbed dose demonstrate that SiC can be profitably used as radiation dosimetry in proton therapy applications.
First characterization of a new Silicon Carbide detector for dosimetric applications
Altana C.;
2020
Abstract
Silicon Carbide (SiC) has been recently proposed and patented as a material for the realization of radiation dosimetry detectors. SiC properties, including its high sensitivity, radiation damage resistance and its extremely small sensitivity region, make it an amazing device susceptible to radiation dosimetric applications of direct ionizing radiations. In this work, a dosimetric characterization of a 10 μm thick SiC detector, irradiated with 62 MeV monochromatic and clinical SOBP proton beams, is reported. Short term reproducibility and linearity with the absorbed dose demonstrate that SiC can be profitably used as radiation dosimetry in proton therapy applications.
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