New method for the production of thin and stable, segmented n + contacts in HPGe detectors

The realization of pulsed-laser diffused, thin n+ contacts on high purity germanium (HPGe) and their successful segmentation is described. The contacts have been obtained by a laser-induced diffusion of Sb atoms, deposited by sputtering on Ge surface, and then segmented by means of a photolithographic technique. Three small prototypes of gamma ray detectors have been implemented, using the same n+ contact (laser diffused Sb) but with three different geometries and a B implanted p+ contact. Electrical and detection properties of the prototypes have been characterized, showing low leakage currents and good spectroscopy data with different gamma-ray sources. The stability of the detector performance has also been tested subjecting one of the prototypes to a typical annealing treatment.