Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

Maji, D; Crupi, F; Magnone, P; Giusi, G; Pace, C; Simoen, E; V R, Rao

doi:10.1109/EDST.2009.5166133

Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

Maji D;Crupi F;Magnone P;Giusi G;Pace C;Simoen E;Rao V R

2009

Scheda breve

Scheda completa

Scheda completa (DC)

	Anno
	
				2009
			
	Titolo del Libro
	
				International Workshop on Electron Devices and Semiconductor Technology
			
	Titolo convegno
	
				2nd IEEE International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009)
			
	Codice DOI
	
				https://dx.doi.org/10.1109/EDST.2009.5166133
			
	Codice WOS
	
				WOS:000273604800034
			
	Codice Scopus
	
				2-s2.0-77949899055
			
	Codice ISBN
	
				978-1-4244-3831-0
			
	Appare nelle tipologie:
	
				04.01 - Contributo in atti di convegno