In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (100) substrates by the technique of electron beam evaporation. The films were deposited at a substrate temperature of 150°C with a deposition rate of 0.3 - 0.5 A/sec. The films thicknesses were characterized by spectroscopic ellipsometry and profilometry. The surface roughness was measured by AFM obtaining RMS of less than 0.7nm. Investigations performed by XPS method have shown that stoichiometric TiO2 was obtained on all the samples with no suboxide presences. Reflectance measurements of the samples were performed in EUV and SX spectral regions from 25.5 to 454.2eV using synchrotron radiation. Analyzing the refractive index N=n+ik of TiO2 thin films, optical constants (n,k) in this energy range were both determined by fitting the Fresnel equations with least-square fitting methods.

Characterization of TiO2 thin films in the EUV and soft X-ray region

COMISSO, ANTONELA;CALVILLO LAMANA, LAURA;SERTSU, MEWAEL GIDAY;GRANOZZI, GAETANO;BRIGO, LAURA;NICOLOSI, PIERGIORGIO
2015

Abstract

In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (100) substrates by the technique of electron beam evaporation. The films were deposited at a substrate temperature of 150°C with a deposition rate of 0.3 - 0.5 A/sec. The films thicknesses were characterized by spectroscopic ellipsometry and profilometry. The surface roughness was measured by AFM obtaining RMS of less than 0.7nm. Investigations performed by XPS method have shown that stoichiometric TiO2 was obtained on all the samples with no suboxide presences. Reflectance measurements of the samples were performed in EUV and SX spectral regions from 25.5 to 454.2eV using synchrotron radiation. Analyzing the refractive index N=n+ik of TiO2 thin films, optical constants (n,k) in this energy range were both determined by fitting the Fresnel equations with least-square fitting methods.
2015
EUV and X-ray Optics: Synergy between Laboratory and Space IV
9781628416312
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3155962
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