CDF Run IIb silicon detector: The innermost layer

Merkel, P.; Azzi, P.; Bacchetta, N.; Bisello, Dario; Busetto, Giovanni; Hara, K.; Kim, S.; Manea, C.; Wang, Z.; Behari, S.; Maksimovic, P.; Benjamin, D.; Cabrera, S.; Kruse, M.; Bolla, G.; Bortoletto, D.; Canepa, A.; Fernandez, J. P.; Booth, P.; Cooke, P.; Cascella, M.; Cardoso, G.; Derylo, G.; Flaugher, B.; Hrycyk, M.; Kuznetsova, N.; Lukens, P.; Nelson, T.; Orlov, Y.; Wester, W.; Yun, J. C.; Chertok, M.; Holbrook, B.; Lander, R.; Landry, T.; Pellett, D.; Soha, A.; Yao, W.; Ciobanu, C. I.; Junk, T.; Feng, E. J.; Freeman, J.; Galtieri, L.; Garcia Sciveres, M.; Haber, C.; Lujan, P. J.; Mandelli, E.; Weber, M.; Yao, W.; Zetti, F.; Zimmermann, S.; Goldstein, J.; Harr, R.; Hill, C.; Himmel, A.; Incandela, J.; Stuart, D.; Kobayashi, K.; Nakano, I.; Tanaka, R.; Kong, D. J.; Yang, Y. C.; Lauhakangas, R.; Orava, R.; Osterberg, K.; R. S., Lu; Min, S. N.; Okusawa, T.; Yamamoto, K.; Tavi, M.; Zucchelli, S.; Hong, S. C.; Jeon, E. J.; Joo, K. K.; Lee, J.

doi:10.1109/TNS.2004.835876

The innermost layer (L00) of the Run IIa silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run IIa. The data are read out via long, fine-pitch, low-mass cables allowing the hybrids with the chips to sit at higher z(similar to 70 cm), outside of the tracking volume. The design and first results from the prototyping phase are presented. Special focus is placed on the amount and the structure of induced noise as well as signal-to-noise values.