The radiation damage induced by 27 MeV protons has been studied on diodes fabricated from standard and oxygen-enriched FZ substrates. Measurements confirm that the damage constant alpha is insensitive to the oxygen concentration whereas the acceptor creation rate parameter beta is lower for oxygenated diodes. However, the effect is significantly smaller than that observed with high-energy protons, but somewhat higher than that by reactor neutrons. Data have been collected at the irradiation facility of the Tandem at the INFN Laboratories of Legnaro.
Radiation damage of oxygenated silicon diodes by 27 MeV protons
BISELLO, DARIO;PANTANO, DEVIS;
1999
Abstract
The radiation damage induced by 27 MeV protons has been studied on diodes fabricated from standard and oxygen-enriched FZ substrates. Measurements confirm that the damage constant alpha is insensitive to the oxygen concentration whereas the acceptor creation rate parameter beta is lower for oxygenated diodes. However, the effect is significantly smaller than that observed with high-energy protons, but somewhat higher than that by reactor neutrons. Data have been collected at the irradiation facility of the Tandem at the INFN Laboratories of Legnaro.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.