The main electrical characteristics at room temperature of Metal-Resistive layer-Silicon avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. Hysteresis of the I-V characteristics and transients taking place during tests at fixed bias have been experimentally studied, in correlation also with the effect of ionizing radiation. The device time response has been tested by using a Sr-90 source.
Electrical characteristics of Metal-Resistive layer-Silicon (MRS) avalanche detectors
BISELLO, DARIO;PACCAGNELLA, ALESSANDRO;PANTANO, DEVIS;
1995
Abstract
The main electrical characteristics at room temperature of Metal-Resistive layer-Silicon avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. Hysteresis of the I-V characteristics and transients taking place during tests at fixed bias have been experimentally studied, in correlation also with the effect of ionizing radiation. The device time response has been tested by using a Sr-90 source.
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