We present the first charge loss model on nanocrystal memories the threshold voltage dependence on the ion hit number and position and it provides the estimation of the ion hit track size.

Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal Memory Cell

CESTER, ANDREA;WRACHIEN, NICOLA;
2008

Abstract

We present the first charge loss model on nanocrystal memories the threshold voltage dependence on the ion hit number and position and it provides the estimation of the ion hit track size.
2008
45th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2008
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2512538
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