We present the first charge loss model on nanocrystal memories the threshold voltage dependence on the ion hit number and position and it provides the estimation of the ion hit track size.
Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal Memory Cell
CESTER, ANDREA;WRACHIEN, NICOLA;
2008
Abstract
We present the first charge loss model on nanocrystal memories the threshold voltage dependence on the ion hit number and position and it provides the estimation of the ion hit track size.File in questo prodotto:
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