In this work we are moving our attention on MOSFETs, which are the real basic element of all CMOS application. Our work presents a new degradation mechanism, which must not be confused with the single-event microdose effect presented by Oldham and McGarrity in 1981 [ref]. The incidence of a single ion can dramatically decrease the drain current capability of thin gate oxide MOSFET. This effects are emphasized by scaling down the transistor sizes. We think that neutral defect generation in those region corresponding to ion hits can be good candidate to explain these results, and we plan to extend the exploration of this new phenomenon that appears to be very interesting.
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation
CESTER, ANDREA;A. Paccagnella;
2004
Abstract
In this work we are moving our attention on MOSFETs, which are the real basic element of all CMOS application. Our work presents a new degradation mechanism, which must not be confused with the single-event microdose effect presented by Oldham and McGarrity in 1981 [ref]. The incidence of a single ion can dramatically decrease the drain current capability of thin gate oxide MOSFET. This effects are emphasized by scaling down the transistor sizes. We think that neutral defect generation in those region corresponding to ion hits can be good candidate to explain these results, and we plan to extend the exploration of this new phenomenon that appears to be very interesting.
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