RILC is mediated by an anelastic trap-assisted tunnelling through neutral defects. It depends from the oxide field during irradiation and it is maximum under zero-field condition. Neutral defect distribution is determined by the oxide field and charged precursor, likely hole traps. RILC grows linearly with the cumulative dose
Radiation induced leakage current and stress induced leakage current on ultra-thin gate oxides
A. Paccagnella;CESTER, ANDREA;
1998
Abstract
RILC is mediated by an anelastic trap-assisted tunnelling through neutral defects. It depends from the oxide field during irradiation and it is maximum under zero-field condition. Neutral defect distribution is determined by the oxide field and charged precursor, likely hole traps. RILC grows linearly with the cumulative dose
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