Surface Effects Controlling Electron-stimulated Oxidation of Silicon

Previously reported experimental results on the electron-stimulated oxidation of Si are quantitatively described. The framework of the analysis is a macroscopic continuum model which includes transport processes through the oxide layer, and surface effects mainly connected to the O//2 sticking coefficient. The existence of the chemisorbed precursor states is pointed out and a simple picture of the potential energy experienced by the O//2 molecule approaching the surface of the oxide layer is proposed.