Synchroton-radiation-induced photoemission spectroscopy (SRPES) measurements were carried out on clean and VO2-deposited TiO2 (110) surfaces. Metal V was deposited at room temperature (RT) onto the TiO2 surface and then oxidized to VO2 at 473 K. At a V coverage of 0.2 ML on TiO2 (110), both metallic and oxidized states of V 3d are clearly seen near the Fermi level (EF), indicating a strong interaction of metal V with O even at RT. After oxidation of V, a clear (1×1) VO2 superstructure appears. A semiconductor-to-metal phase transition occurs when the VO2 film is heated. The energy shift near EF is 0.1 eV over the RT to 394 K temperature range. This process for the ultrathin film was found to be reversible in that temperature range.
Synchrotron-radiation-induced photoemission study of VO2 ultrathin films deposited on TiO2(110)
SAMBI, MAURO;GRANOZZI, GAETANO
1998
Abstract
Synchroton-radiation-induced photoemission spectroscopy (SRPES) measurements were carried out on clean and VO2-deposited TiO2 (110) surfaces. Metal V was deposited at room temperature (RT) onto the TiO2 surface and then oxidized to VO2 at 473 K. At a V coverage of 0.2 ML on TiO2 (110), both metallic and oxidized states of V 3d are clearly seen near the Fermi level (EF), indicating a strong interaction of metal V with O even at RT. After oxidation of V, a clear (1×1) VO2 superstructure appears. A semiconductor-to-metal phase transition occurs when the VO2 film is heated. The energy shift near EF is 0.1 eV over the RT to 394 K temperature range. This process for the ultrathin film was found to be reversible in that temperature range.
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