An ion electron emission microscope (IEEM) to be installed at the SIRAD heavy ion irradiation facility at the 15 MV tandem accelerator of the INFN Legnaro laboratory (Italy) will be used to characterize the sensitivity of electronic devices to single event effects (SEE) to ion impacts with micrometric lateral resolutions. The secondary electrons emitted by ion impacts from the target surface are transported and focused by an electron microscope onto a micro-channel plate (MCP) detector coupled to a fast phosphor. The luminous signal is then detected by a position sensitive photon detector located outside the vacuum chamber. The high repetition rates and high spatial resolution, required to temporally distinguish ion impacts for SEE studies and avoid degrading of the initial resolution of the IEEM and MCP are met by the system, presented here for the first time, based on two orthogonal linear CCDs.
A novel sensor for ion electron emission microscopy
BISELLO, DARIO;DAL MASCHIO, MARCO;GIUBILATO, PIERO;NIGRO, MASSIMO;PANTANO, DEVIS;RANDO, RICCARDO;
2004
Abstract
An ion electron emission microscope (IEEM) to be installed at the SIRAD heavy ion irradiation facility at the 15 MV tandem accelerator of the INFN Legnaro laboratory (Italy) will be used to characterize the sensitivity of electronic devices to single event effects (SEE) to ion impacts with micrometric lateral resolutions. The secondary electrons emitted by ion impacts from the target surface are transported and focused by an electron microscope onto a micro-channel plate (MCP) detector coupled to a fast phosphor. The luminous signal is then detected by a position sensitive photon detector located outside the vacuum chamber. The high repetition rates and high spatial resolution, required to temporally distinguish ion impacts for SEE studies and avoid degrading of the initial resolution of the IEEM and MCP are met by the system, presented here for the first time, based on two orthogonal linear CCDs.Pubblicazioni consigliate
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