The clustering process of gold atoms in ion-implanted silica, during annealing in different atmospheres, is experimentally investigated and phenomenologically described. With respect to inert (Ar) or reducing (H2-Ar) atmosphere, annealing in oxidizing (air) atmosphere is the most effective in promoting cluster formation above 700–800°C due to a thermally activated correlated diffusion of gold atoms and excess oxygen molecules coming from the atmosphere.
Clustering of gold atoms in ion-implanted silica after thermal annealing in different atmospheres
MATTEI, GIOVANNI;MAZZOLDI, PAOLO;SADA, CINZIA
2001
Abstract
The clustering process of gold atoms in ion-implanted silica, during annealing in different atmospheres, is experimentally investigated and phenomenologically described. With respect to inert (Ar) or reducing (H2-Ar) atmosphere, annealing in oxidizing (air) atmosphere is the most effective in promoting cluster formation above 700–800°C due to a thermally activated correlated diffusion of gold atoms and excess oxygen molecules coming from the atmosphere.
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