Growths of nanophased Cu, CuO, Cu-TiO2 and Cu2O-TiO2 thin films were performed by using titanium tetraisopropoxide Ti((OPr)-Pr-i)(4), and copper(II)acetylacetonatehydrate Cu(acac)(2)(H2O)-H-. in the temperature range 275-370degreesC. The composite Cu-TiO2 with very low percent of titanium dioxide (TiO2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu2O-TiO2 were obtained by annealing of Cu-TiO2 thin films. Cu2O in a TiO2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region
Conductive Cu-TiO2 thin films obtained via MOCVD
FREGONA, DOLORES;
2002
Abstract
Growths of nanophased Cu, CuO, Cu-TiO2 and Cu2O-TiO2 thin films were performed by using titanium tetraisopropoxide Ti((OPr)-Pr-i)(4), and copper(II)acetylacetonatehydrate Cu(acac)(2)(H2O)-H-. in the temperature range 275-370degreesC. The composite Cu-TiO2 with very low percent of titanium dioxide (TiO2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu2O-TiO2 were obtained by annealing of Cu-TiO2 thin films. Cu2O in a TiO2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
