Amorphous WO3 films, doped with phosphorus, have been synthesized by chemical vapor deposition of volatile, low-melting P-substituted tungsten carbonyls. The presence of a small quantity of dopant released by the precursor during its decomposition is sufficient to inhibit the crystallization of the tungsten oxide on the matrix (P/W 2-4 atom % on Si(100) and ca. 10 atom % on KGlass). The nature of the film is scarcely affected by the experimental conditions of deposition (namely p(O2) partial pressure) and the quantity of the P dopant is properly tuned by an appropriate choice of the molecular precursor, being in the order W(CO)(4)[P(OEt)(3)](2) (P/W 1/1) > W-2(mu-PR2)(2)(CO)(8) (P/W 1/4) > W(CO)(4)(PEt3)(2) (P/W 1/10 on KGlass, 1/30 on Si). The films on KGlass exhibit interesting electrochromic properties with a maximum efficiency of 66 cm(2)/C.

Amorphous WO3 Films via Chemical Vapor Deposition from Metallorganic Precursors Containing Phosphorus Dopant.

BRESCACIN, ENRICO;BASATO, MARINO;TONDELLO, EUGENIO
1999

Abstract

Amorphous WO3 films, doped with phosphorus, have been synthesized by chemical vapor deposition of volatile, low-melting P-substituted tungsten carbonyls. The presence of a small quantity of dopant released by the precursor during its decomposition is sufficient to inhibit the crystallization of the tungsten oxide on the matrix (P/W 2-4 atom % on Si(100) and ca. 10 atom % on KGlass). The nature of the film is scarcely affected by the experimental conditions of deposition (namely p(O2) partial pressure) and the quantity of the P dopant is properly tuned by an appropriate choice of the molecular precursor, being in the order W(CO)(4)[P(OEt)(3)](2) (P/W 1/1) > W-2(mu-PR2)(2)(CO)(8) (P/W 1/4) > W(CO)(4)(PEt3)(2) (P/W 1/10 on KGlass, 1/30 on Si). The films on KGlass exhibit interesting electrochromic properties with a maximum efficiency of 66 cm(2)/C.
1999
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/105667
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