The present work not only extend SEGR results down to 1.7nm gate oxides thickness, but also investigates new SEGR aspects in ultra-thin oxides, such as the effect of the gate polarity during irradiation, the non-hard breakdown characteristics appearing during SEGR, and the breakdown in pMOS devices. We address also the problem of correctly evaluating the oxide field during irradiation, when a high gate current is present owing to a high electron tunneling injection across the oxide.
Radiation Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides
CESTER, ANDREA;A. Paccagnella;
2005
Abstract
The present work not only extend SEGR results down to 1.7nm gate oxides thickness, but also investigates new SEGR aspects in ultra-thin oxides, such as the effect of the gate polarity during irradiation, the non-hard breakdown characteristics appearing during SEGR, and the breakdown in pMOS devices. We address also the problem of correctly evaluating the oxide field during irradiation, when a high gate current is present owing to a high electron tunneling injection across the oxide.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
