GERARDIN, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 16.552
EU - Europa 2.289
AS - Asia 1.731
SA - Sud America 48
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 4
Totale 20.647
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Nazione #
US - Stati Uniti d'America 16.540
SG - Singapore 867
CN - Cina 660
IE - Irlanda 557
IT - Italia 479
DE - Germania 253
FI - Finlandia 248
SE - Svezia 199
GB - Regno Unito 135
UA - Ucraina 113
FR - Francia 100
RU - Federazione Russa 96
HK - Hong Kong 71
VN - Vietnam 71
BR - Brasile 41
AT - Austria 31
NL - Olanda 25
GR - Grecia 18
IN - India 17
CI - Costa d'Avorio 14
CA - Canada 12
JP - Giappone 9
KR - Corea 9
EU - Europa 7
CH - Svizzera 6
ES - Italia 6
TR - Turchia 6
RO - Romania 4
AE - Emirati Arabi Uniti 3
BE - Belgio 3
LT - Lituania 3
NO - Norvegia 3
TW - Taiwan 3
AU - Australia 2
BD - Bangladesh 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
IR - Iran 2
MY - Malesia 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PL - Polonia 2
VE - Venezuela 2
AM - Armenia 1
BG - Bulgaria 1
BO - Bolivia 1
CL - Cile 1
DZ - Algeria 1
EC - Ecuador 1
HR - Croazia 1
HU - Ungheria 1
IQ - Iraq 1
KG - Kirghizistan 1
KH - Cambogia 1
MA - Marocco 1
PE - Perù 1
PH - Filippine 1
PY - Paraguay 1
SI - Slovenia 1
TH - Thailandia 1
UZ - Uzbekistan 1
Totale 20.647
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Città #
Fairfield 2.518
Woodbridge 1.628
Houston 1.481
Ann Arbor 1.260
Ashburn 969
Cambridge 921
Seattle 904
Wilmington 814
Dublin 552
Chandler 480
Jacksonville 439
Singapore 385
Boardman 304
San Diego 263
Princeton 243
Santa Clara 237
Padova 216
Leesburg 201
Medford 161
Des Moines 153
Beijing 122
Nanjing 97
Guangzhou 95
Helsinki 93
Roxbury 91
Dong Ket 71
Hong Kong 70
Munich 46
London 41
Shanghai 40
Shenyang 36
Mestre 33
Hebei 29
Milan 28
Nanchang 26
Venice 23
Changsha 22
Jiaxing 22
Los Angeles 17
New York 15
Tianjin 15
Vienna 15
Washington 15
Abidjan 14
Norwalk 14
Jinan 13
Borås 11
Chicago 11
Nuremberg 11
Ogden 11
Redwood City 11
Kilburn 10
Duncan 9
Falkenstein 9
Indiana 9
Kharkiv 9
Dallas 8
Frankfurt am Main 8
Auburn Hills 7
Ningbo 7
Delhi 6
Hounslow 6
Rome 6
Toronto 5
Zhengzhou 5
Acton 4
Amsterdam 4
Brendola 4
Chiswick 4
Falls Church 4
Florence 4
Hangzhou 4
Hanover 4
Lappeenranta 4
Madrid 4
Nürnberg 4
Rockville 4
Salt Lake City 4
Springfield 4
Tappahannock 4
Tokyo 4
Albino 3
Belo Horizonte 3
Bologna 3
Brussels 3
Buffalo 3
Fort Worth 3
Groningen 3
Haikou 3
Moscow 3
New Bedfont 3
North York 3
Oberentfelden 3
Orange 3
Pune 3
Redmond 3
Rio de Janeiro 3
Seongnam-si 3
Stockholm 3
Tomsk 3
Totale 15.512
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.624
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 729
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 562
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 379
Accelerated testing of RF-MEMS contact degradation through radiation sources 194
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments 185
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 184
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 181
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 167
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 154
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 152
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 151
Destructive events in NAND Flash memories irradiated with heavy ions 144
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 140
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 138
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 136
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 133
Neutron-Induced Upsets in NAND Floating Gate Memories 130
Error Instability in Floating Gate Flash Memories Exposed to TID 129
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 128
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 127
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 126
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 126
Neutron-induced soft errors in advanced Flash memories 125
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 124
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 124
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 123
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 121
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 120
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 120
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 116
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 116
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 115
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 114
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 114
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 114
Radiation damage on dielectrics: Single event effects 113
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 113
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 112
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 111
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 111
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 111
Proton induced trapping effect on space compatible GaN HEMTs 111
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 111
TID sensitivity of NAND Flash memory building blocks 111
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 110
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 110
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 109
Radiation Effects in NAND Flash Memories 108
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 107
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 105
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 105
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 104
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 104
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 104
Total Ionizing Dose Effects in 3-D NAND Flash Memories 104
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 104
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 103
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide 103
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 102
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 102
1GigaRad TID impact on 28 nm HEP analog circuits 102
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC 101
Developments on DC/DC converters for the LHC experiment upgrades 101
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 101
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses 101
Layout-Aware Multi-Cell Upsets Effects Analysis on TMR Circuits Implemented on SRAM-Based FPGAs 99
1GigaRad TID impact on 28nm HEP analog circuits 99
Single Event Effects in 90-nm Phase Change Memories 98
Gate rupture in ultra-thin gate oxides irradiated with heavy ions 98
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 97
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 96
On the static cross section of SRAM-based FPGAs 96
Single event gate rupture in 130-nm CMOS transistor arrays subjected to X-ray irradiation 96
Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source 96
Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses 96
Impact of total dose on heavy-ion upsets in floating gate arrays 95
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 95
Total Ionizing Dose Effects in Si-Based Tunnel FETs 94
TID Sensitivity of NAND Flash Memory Building Blocks 94
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications 94
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 94
DfT Reuse for Low-Cost Radiation Testing of SoCs: A Case Study 93
Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose 93
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 93
Muon-induced soft errors in 16-nm NAND flash memories 93
Radiation environment in the ITER neutral beam injector prototype 93
SEE tests of the NAND flash radiation tolerant intelligent memory stack 92
Present and Future Non-volatile Memories for Space 91
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 91
Radiation Environment in the ITER Neutral Beam Injector Prototype 91
Layout-aware multi-cell upsets effects analysis on TMR circuits implemented on SRAM-based FPGAs 91
65 nm technology for HEP: Status and perspective 91
Impact of radiation on the operation and reliability of deep submicron CMOS 90
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 90
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 90
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs 89
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 89
Atmospheric Neutron Soft Errors in 3D NAND Flash Memories 89
Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs 89
Totale 14.034
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Categoria #
all - tutte 71.997
article - articoli 47.138
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 813
Totale 119.948
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020646 0 0 0 0 0 0 0 0 0 293 226 127
2020/20212.372 121 170 146 213 89 165 157 260 363 178 314 196
2021/20223.209 67 295 675 168 145 106 166 383 147 77 352 628
2022/20231.818 369 52 72 189 299 206 78 150 176 25 116 86
2023/20241.049 80 148 110 90 68 71 40 35 38 140 124 105
2024/20254.301 2.022 431 150 159 518 150 167 336 270 98 0 0
Totale 20.886