GERARDIN, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 18.670
AS - Asia 5.797
EU - Europa 4.462
AF - Africa 1.662
SA - Sud America 1.272
OC - Oceania 159
Continente sconosciuto - Info sul continente non disponibili 85
Totale 32.107
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Nazione #
US - Stati Uniti d'America 17.831
SG - Singapore 2.128
CN - Cina 990
BR - Brasile 714
HK - Hong Kong 649
IE - Irlanda 601
IT - Italia 587
VN - Vietnam 410
DE - Germania 339
FI - Finlandia 317
PL - Polonia 298
SE - Svezia 249
GB - Regno Unito 191
UA - Ucraina 160
FR - Francia 157
RU - Federazione Russa 147
NL - Olanda 113
AR - Argentina 110
KR - Corea 92
AT - Austria 91
ES - Italia 80
EC - Ecuador 79
IN - India 77
TR - Turchia 77
MX - Messico 74
ZA - Sudafrica 74
JP - Giappone 68
RO - Romania 66
AE - Emirati Arabi Uniti 61
GR - Grecia 60
PY - Paraguay 59
CH - Svizzera 58
IQ - Iraq 58
UZ - Uzbekistan 58
AO - Angola 57
CI - Costa d'Avorio 57
CO - Colombia 57
VE - Venezuela 57
DZ - Algeria 55
HU - Ungheria 55
ID - Indonesia 54
IR - Iran 54
MA - Marocco 54
AL - Albania 53
PK - Pakistan 53
PS - Palestinian Territory 53
NO - Norvegia 51
AZ - Azerbaigian 50
BJ - Benin 50
DO - Repubblica Dominicana 50
MK - Macedonia 50
UG - Uganda 50
BE - Belgio 49
CU - Cuba 49
KH - Cambogia 49
NP - Nepal 49
SO - Somalia 48
BZ - Belize 47
CA - Canada 47
CL - Cile 47
JM - Giamaica 47
LB - Libano 47
MD - Moldavia 47
PA - Panama 47
SA - Arabia Saudita 47
TJ - Tagikistan 47
HN - Honduras 46
TT - Trinidad e Tobago 46
BG - Bulgaria 45
EG - Egitto 45
BA - Bosnia-Erzegovina 44
EE - Estonia 44
ET - Etiopia 44
MG - Madagascar 44
MU - Mauritius 44
PE - Perù 44
YT - Mayotte 44
CG - Congo 43
DK - Danimarca 43
JO - Giordania 43
LA - Repubblica Popolare Democratica del Laos 43
PT - Portogallo 43
SK - Slovacchia (Repubblica Slovacca) 43
GN - Guinea 42
KZ - Kazakistan 42
TZ - Tanzania 42
GM - Gambi 41
HR - Croazia 41
SI - Slovenia 41
YE - Yemen 41
ZM - Zambia 41
AU - Australia 40
LY - Libia 40
PR - Porto Rico 40
RS - Serbia 40
XK - ???statistics.table.value.countryCode.XK??? 40
AM - Armenia 39
BW - Botswana 39
CV - Capo Verde 39
GE - Georgia 39
Totale 30.185
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Città #
Fairfield 2.518
Woodbridge 1.628
Houston 1.492
Ashburn 1.387
Ann Arbor 1.260
Singapore 1.091
Cambridge 921
Seattle 910
Wilmington 819
Hong Kong 616
Dublin 585
Chandler 480
Jacksonville 439
Boardman 306
San Diego 263
Santa Clara 257
Beijing 255
Princeton 243
Bytom 227
Padova 216
Leesburg 201
Medford 161
Des Moines 153
Los Angeles 131
Ho Chi Minh City 126
Munich 112
Helsinki 107
Nanjing 98
Guangzhou 96
Roxbury 91
Dong Ket 71
Chicago 67
Hanoi 65
Buffalo 64
Vienna 61
New York 60
São Paulo 58
London 53
Luanda 52
Tashkent 52
Abidjan 50
Milan 50
Baku 49
Kampala 49
Cotonou 48
Shanghai 48
Phnom Penh 45
Dushanbe 44
Panama City 44
Havana 43
Hefei 42
Amman 41
Conakry 41
Lusaka 41
Tokyo 41
Seoul 39
Warsaw 39
Antananarivo 38
Kigali 38
Nouakchott 38
Vientiane 38
Dakar 37
Nairobi 37
Redondo Beach 37
Shenyang 37
Dar es Salaam 36
Johannesburg 36
Managua 36
Ulan Bator 36
Harare 35
Willemstad 35
Gaborone 34
Accra 33
Mestre 33
Riga 33
Andorra la Vella 32
Bamako 32
Maputo 31
Salt Lake City 31
Addis Ababa 30
Castries 30
Libreville 30
Montevideo 30
Pristina 30
Tallinn 30
Bishkek 29
Chisinau 29
Hebei 29
Kingston 29
Noumea 29
Praia 29
San José 29
Skopje 29
Tirana 29
Guayaquil 28
Kinshasa 28
Lilongwe 28
Turku 28
Yerevan 28
Brooklyn 27
Totale 19.927
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.663
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 771
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 606
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 480
Accelerated testing of RF-MEMS contact degradation through radiation sources 257
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 244
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments 233
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 227
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 220
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 213
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 212
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 206
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 199
Neutron-Induced Upsets in NAND Floating Gate Memories 198
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 195
Destructive events in NAND Flash memories irradiated with heavy ions 191
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 188
1GigaRad TID impact on 28 nm HEP analog circuits 186
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 185
Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit 185
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 184
1GigaRad TID impact on 28nm HEP analog circuits 184
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 183
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 183
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 181
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 180
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 177
Proton induced trapping effect on space compatible GaN HEMTs 177
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 176
Error Instability in Floating Gate Flash Memories Exposed to TID 174
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 173
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 173
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 171
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 170
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 170
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 170
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 169
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses 168
65 nm technology for HEP: Status and perspective 165
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 164
Radiation Effects in NAND Flash Memories 163
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 163
Neutron-induced soft errors in advanced Flash memories 161
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 161
Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses 161
TID sensitivity of NAND Flash memory building blocks 161
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 160
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 160
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 159
Single event gate rupture in 130-nm CMOS transistor arrays subjected to X-ray irradiation 159
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 159
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 159
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 159
Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses 158
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 157
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 157
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 156
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 156
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 156
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 155
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology 155
Radiation damage on dielectrics: Single event effects 153
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 153
Layout-Aware Multi-Cell Upsets Effects Analysis on TMR Circuits Implemented on SRAM-Based FPGAs 153
Total Ionizing Dose Effects in 3-D NAND Flash Memories 153
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 152
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 152
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 152
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 151
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 151
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 150
Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs 150
TID Sensitivity of NAND Flash Memory Building Blocks 149
Gate rupture in ultra-thin gate oxides irradiated with heavy ions 149
Impact of total dose on heavy-ion upsets in floating gate arrays 149
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 149
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs 148
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 147
Developments on DC/DC converters for the LHC experiment upgrades 147
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 147
Impact of radiation on the operation and reliability of deep submicron CMOS 145
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 145
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 145
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC 145
DfT Reuse for Low-Cost Radiation Testing of SoCs: A Case Study 144
Layout-aware multi-cell upsets effects analysis on TMR circuits implemented on SRAM-based FPGAs 143
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC 142
On the static cross section of SRAM-based FPGAs 142
Influence of Fin and Finger-Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultra-High Doses 142
Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing 142
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 141
Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source 141
Single Event Effects in 90-nm Phase Change Memories 140
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 139
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide 139
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses 139
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility 139
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 138
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 138
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 138
Totale 19.368
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Categoria #
all - tutte 93.014
article - articoli 61.297
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.091
Totale 155.402
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.633 0 0 0 0 0 165 157 260 363 178 314 196
2021/20223.209 67 295 675 168 145 106 166 383 147 77 352 628
2022/20231.818 369 52 72 189 299 206 78 150 176 25 116 86
2023/20241.049 80 148 110 90 68 71 40 35 38 140 124 105
2024/20256.167 2.022 431 150 159 518 150 167 336 270 187 749 1.028
2025/20269.605 541 1.656 2.558 3.070 1.468 312 0 0 0 0 0 0
Totale 32.357