GERARDIN, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 21.950
AS - Asia 9.118
EU - Europa 5.200
AF - Africa 1.810
SA - Sud America 1.617
OC - Oceania 161
Continente sconosciuto - Info sul continente non disponibili 87
Totale 39.943
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Nazione #
US - Stati Uniti d'America 20.984
SG - Singapore 2.959
CN - Cina 1.609
VN - Vietnam 1.110
BR - Brasile 895
HK - Hong Kong 867
IT - Italia 867
IE - Irlanda 601
FR - Francia 386
DE - Germania 375
FI - Finlandia 328
PL - Polonia 305
IN - India 260
SE - Svezia 253
GB - Regno Unito 240
BD - Bangladesh 225
RU - Federazione Russa 166
UA - Ucraina 164
AR - Argentina 155
IQ - Iraq 146
TR - Turchia 142
JP - Giappone 132
NL - Olanda 129
ES - Italia 109
PK - Pakistan 108
ZA - Sudafrica 107
KR - Corea 106
CA - Canada 105
EC - Ecuador 100
SA - Arabia Saudita 98
AT - Austria 95
MX - Messico 93
CO - Colombia 87
UZ - Uzbekistan 83
VE - Venezuela 83
PH - Filippine 82
ID - Indonesia 80
RO - Romania 70
AE - Emirati Arabi Uniti 69
MA - Marocco 69
PY - Paraguay 66
DZ - Algeria 65
CL - Cile 63
GR - Grecia 62
JM - Giamaica 62
CH - Svizzera 61
CI - Costa d'Avorio 61
ET - Etiopia 60
HU - Ungheria 60
AO - Angola 59
NP - Nepal 59
PS - Palestinian Territory 58
AL - Albania 57
MY - Malesia 56
EG - Egitto 55
IR - Iran 55
JO - Giordania 54
NO - Norvegia 54
PE - Perù 53
AZ - Azerbaigian 52
BJ - Benin 52
DO - Repubblica Dominicana 52
TH - Thailandia 52
TW - Taiwan 52
BE - Belgio 51
MK - Macedonia 51
TT - Trinidad e Tobago 51
UG - Uganda 51
HN - Honduras 50
KE - Kenya 50
MD - Moldavia 50
PA - Panama 50
TN - Tunisia 50
CU - Cuba 49
KH - Cambogia 49
LB - Libano 49
BG - Bulgaria 48
SO - Somalia 48
BZ - Belize 47
TJ - Tagikistan 47
DK - Danimarca 46
MU - Mauritius 46
YT - Mayotte 46
BA - Bosnia-Erzegovina 45
CG - Congo 45
EE - Estonia 45
LA - Repubblica Popolare Democratica del Laos 45
LY - Libia 45
MG - Madagascar 45
CR - Costa Rica 44
CZ - Repubblica Ceca 44
KZ - Kazakistan 44
PT - Portogallo 44
SK - Slovacchia (Repubblica Slovacca) 44
AU - Australia 42
GN - Guinea 42
HR - Croazia 42
PR - Porto Rico 42
SI - Slovenia 42
TZ - Tanzania 42
Totale 37.893
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Città #
Fairfield 2.518
Ashburn 1.902
Singapore 1.759
San Jose 1.636
Woodbridge 1.628
Houston 1.502
Ann Arbor 1.260
Cambridge 923
Seattle 917
Wilmington 821
Hong Kong 803
Dublin 585
Chandler 481
Jacksonville 445
Ho Chi Minh City 333
Santa Clara 318
Boardman 313
Beijing 269
San Diego 265
Princeton 244
Bytom 227
Hanoi 226
Padova 216
Los Angeles 209
Leesburg 201
Lauterbourg 181
Medford 161
Des Moines 157
Guangzhou 119
Helsinki 118
New York 114
Munich 112
Nanjing 98
Tokyo 96
Roxbury 91
Chicago 83
São Paulo 80
Buffalo 76
Milan 73
Da Nang 72
Tashkent 72
Dong Ket 71
Shanghai 68
Baghdad 65
London 63
Vienna 63
Orem 57
Abidjan 54
Luanda 53
Amman 51
Baku 50
Cotonou 50
Kampala 50
Haiphong 48
Johannesburg 48
Nairobi 47
Panama City 47
Hefei 45
Phnom Penh 45
Addis Ababa 44
Dushanbe 44
Havana 43
Warsaw 43
Conakry 41
Lusaka 41
Dallas 40
Kingston 40
Padua 40
Vientiane 40
Dakar 39
Frankfurt am Main 39
Managua 39
Nouakchott 39
Seoul 39
Antananarivo 38
Kigali 38
Shenyang 38
Atlanta 37
Chennai 37
Redondo Beach 37
Rome 37
Ulan Bator 37
Brooklyn 36
Dar es Salaam 36
Harare 36
Istanbul 36
Riyadh 36
Venice 36
Gaborone 35
Willemstad 35
Jeddah 34
Mestre 34
Riga 34
San José 34
Accra 33
Tirana 33
Andorra la Vella 32
Bamako 32
Denver 32
Guayaquil 32
Totale 24.205
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.696
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 803
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 660
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 544
Accelerated testing of RF-MEMS contact degradation through radiation sources 332
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 284
Neutron-Induced Upsets in NAND Floating Gate Memories 271
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 265
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments 263
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 260
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 256
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 255
Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit 254
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 250
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 244
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 240
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 236
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 235
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC 234
Proton induced trapping effect on space compatible GaN HEMTs 233
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 233
Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses 231
1GigaRad TID impact on 28 nm HEP analog circuits 230
Destructive events in NAND Flash memories irradiated with heavy ions 227
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 225
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 224
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 223
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 221
Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing 221
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 220
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses 220
1GigaRad TID impact on 28nm HEP analog circuits 218
65 nm technology for HEP: Status and perspective 216
Total Ionizing Dose Effects in 3-D NAND Flash Memories 216
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology 215
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 214
Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses 214
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 213
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 213
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 212
Error Instability in Floating Gate Flash Memories Exposed to TID 211
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 207
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 206
Radiation Effects in NAND Flash Memories 205
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 205
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 202
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 202
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs 201
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs 200
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 200
TID sensitivity of NAND Flash memory building blocks 200
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments 200
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 196
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 196
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 195
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 194
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 194
Influence of Fin and Finger-Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultra-High Doses 194
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 193
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 193
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 192
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 190
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 188
Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs 188
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 187
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 186
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 185
Impact of total dose on heavy-ion upsets in floating gate arrays 185
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 184
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 184
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 183
Gate rupture in ultra-thin gate oxides irradiated with heavy ions 183
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 183
DfT Reuse for Low-Cost Radiation Testing of SoCs: A Case Study 182
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 182
TID Sensitivity of NAND Flash Memory Building Blocks 182
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 182
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility 182
Single event gate rupture in 130-nm CMOS transistor arrays subjected to X-ray irradiation 181
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 180
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 180
Developments on DC/DC converters for the LHC experiment upgrades 180
Impact of radiation on the operation and reliability of deep submicron CMOS 178
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 178
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 177
Neutron-induced soft errors in advanced Flash memories 176
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 174
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 174
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 174
Radiation damage on dielectrics: Single event effects 173
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC 173
TID effects in the lateral STI oxide of planar CMOS transistors 172
Layout-Aware Multi-Cell Upsets Effects Analysis on TMR Circuits Implemented on SRAM-Based FPGAs 172
Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses 172
Alpha, Heavy Ion and Neutron Test Results On 90nm ST BCD-CMOS technology 172
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 171
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 171
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 170
Radiation Environment in the ITER Neutral Beam Injector Prototype 170
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 169
Totale 23.380
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Categoria #
all - tutte 111.431
article - articoli 74.010
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.354
Totale 186.795
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.209 67 295 675 168 145 106 166 383 147 77 352 628
2022/20231.818 369 52 72 189 299 206 78 150 176 25 116 86
2023/20241.049 80 148 110 90 68 71 40 35 38 140 124 105
2024/20256.167 2.022 431 150 159 518 150 167 336 270 187 749 1.028
2025/202616.995 541 1.656 2.558 3.070 1.468 746 1.837 1.511 1.692 1.013 577 326
2026/2027451 451 0 0 0 0 0 0 0 0 0 0 0
Totale 40.198