RAMPAZZO, FABIANA
 Distribuzione geografica
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Continente #
NA - Nord America 6.350
EU - Europa 963
AS - Asia 896
Continente sconosciuto - Info sul continente non disponibili 9
SA - Sud America 3
Totale 8.221
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Nazione #
US - Stati Uniti d'America 6.338
CN - Cina 453
IT - Italia 322
SG - Singapore 254
FI - Finlandia 153
DE - Germania 122
UA - Ucraina 89
FR - Francia 68
SE - Svezia 66
IN - India 60
GB - Regno Unito 57
TW - Taiwan 32
JP - Giappone 25
VN - Vietnam 21
IE - Irlanda 16
NL - Olanda 15
RU - Federazione Russa 14
HK - Hong Kong 13
KR - Corea 13
ID - Indonesia 12
BE - Belgio 10
GR - Grecia 10
EU - Europa 8
CH - Svizzera 7
CA - Canada 6
MX - Messico 6
AT - Austria 4
IL - Israele 4
TR - Turchia 4
BR - Brasile 3
ES - Italia 3
DK - Danimarca 2
MY - Malesia 2
NO - Norvegia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
HR - Croazia 1
JO - Giordania 1
KZ - Kazakistan 1
LK - Sri Lanka 1
PL - Polonia 1
RO - Romania 1
Totale 8.221
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Città #
Fairfield 798
Woodbridge 764
Houston 530
Ann Arbor 509
Ashburn 507
Chandler 378
Seattle 371
Jacksonville 360
Wilmington 323
Cambridge 272
Santa Clara 270
Singapore 189
Boardman 179
Beijing 135
Padova 119
Princeton 111
Des Moines 96
Medford 89
San Diego 67
Nanjing 66
Helsinki 64
Roxbury 35
Guangzhou 31
New York 24
Shenyang 22
Washington 22
Dong Ket 21
Bengaluru 19
Dublin 16
Hebei 14
Redwood City 14
Norwalk 13
Hsinchu 12
Jiaxing 12
London 12
Nanchang 12
Changsha 11
Lappeenranta 11
Tokyo 11
Chennai 10
Delhi 10
Los Angeles 10
Mestre 10
Modena 10
Hong Kong 9
Kharkiv 9
Munich 9
Indiana 8
Patna 8
Dallas 7
Taipei 7
Turin 7
Basel 6
Nijmegen 6
San Francisco 6
Taichung 6
Ciudad Nezahualcoyotl 5
Galliate Lombardo 5
Higashimukōjima 5
Jinan 5
Ogden 5
Shanghai 5
Tianjin 5
Tomsk 5
Agordo 4
Borås 4
Brussels 4
Falls Church 4
Hounslow 4
Kanpur 4
Kilburn 4
Leuven 4
Ningbo 4
Parma 4
Sarcedo 4
Yenibosna 4
Zhengzhou 4
Azzano Decimo 3
Bandung 3
Bologna 3
Boulder 3
Cabiate 3
Chicago 3
Frankfurt am Main 3
Haifa 3
Hefei 3
Hwaseong-si 3
Islington 3
Leawood 3
Ma On Shan 3
Madrid 3
Milan 3
New Bedfont 3
Nürnberg 3
Odawara 3
Riese Pio X 3
São Paulo 3
Toulouse 3
Venice 3
Villach 3
Totale 6.808
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 184
A review of failure modes and mechanisms of GaN-based HEMT's 174
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 164
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 162
Analysis of hot carrier aging degradation in GaN MESFETs 157
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 155
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 152
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 146
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 144
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 144
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 136
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 129
Degradation physics of GaN-based lateral and vertical devices 123
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 120
Hot carrier aging degradation phenomena in GaN based MESFETs 119
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs 117
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 116
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 115
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 113
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate 112
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 107
Proton induced trapping effect on space compatible GaN HEMTs 105
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 104
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 101
Developments on DC/DC converters for the LHC experiment upgrades 98
Reliability and failure analysis in power GaN-HEMTs: An overview 97
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 96
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 93
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 89
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 88
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 88
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 86
Field-dependent degradation mechanisms in GaN-based HEMTs 85
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 84
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 83
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 83
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 83
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs 81
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 81
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 80
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 79
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 75
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 74
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors 73
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 72
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 68
Degradation of GaN HEMT at high drain voltages 68
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 68
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 68
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 68
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 67
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 67
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 65
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 64
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 64
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 64
Failure mechanisms of GaN-based transistors in on- and off-state 63
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 62
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 62
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 61
Light emission in GaN HEMTs: a powerful characterization and reliability tool 61
Reliability analysis of GaN-Based LEDs for solid state illumination 60
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 60
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 59
Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs 58
Reliability improvement of AlGaN/GaN HEMTs for space applications 57
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 57
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion 57
Reliability aspects of GaN microwave devices 56
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs 56
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 56
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 56
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 54
Time dependent Degradation of AlGaN/GaN HEMTs 53
Gallium Nitride power devices: challenges and perspectives 53
Instabilities and degradation in GaN-based devices 52
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 51
Trap related instabilities and localized damages induced by reverse bias” 51
Reliability aspects of GaN microwave devices 51
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 50
Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs 49
On the investigation of ESD Failure mechanisms in AlGaN/GaN RF HEMTs 49
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 48
Novel models for the analysis of the dynamic performance of wide bandgap devices 47
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 47
Challenges towards highly reliable GaN power transistors 46
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 45
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling 43
Study of High-Field Degradation Phenomena in GaN-capped AlGaN/GaN HEMTs 41
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 40
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs 40
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs 36
Reliability analysis of Gan-Based LEDs for solid state illumination 35
Review on the degradation of GaN-based lateral power transistors 34
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 33
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 33
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon 32
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 31
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 31
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 29
Totale 7.843
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Categoria #
all - tutte 32.301
article - articoli 11.678
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.979
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.057 0 0 0 0 138 117 93 165 166 205 112 61
2020/20211.033 47 71 55 87 41 82 75 165 120 85 114 91
2021/20221.008 21 174 122 62 29 47 50 111 42 20 106 224
2022/2023993 157 24 27 78 195 202 12 75 140 3 51 29
2023/2024832 69 109 88 49 60 152 60 39 31 36 61 78
2024/2025931 11 191 135 170 424 0 0 0 0 0 0 0
Totale 8.293